rf power amplifier transistor

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name:Analog Devices Inc.

Model Number:AD8361ARMZ-REEL7

Place of Origin:Multi-origin

...: Reel Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ...

Place of Origin:Freescale Semiconductor

Brand Name:Motorola

Model Number:MHW903

...RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, operate from a 7.2 volt supply and require 1.0 mW (MHW903 / 953) or 100 mW (MHW954) of RF input power. • Specified 7.2 Volt Characteristics: RF Input Power...

Brand Name:Anterwell

Model Number:2SC1972

Place of Origin:original factory

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...

Model Number:PA1268T1624M 10W-28V

Place of Origin:China

Brand Name:MXT

RF Power Amplifier 40dBm SMA/N CW Signal Product Description: RF Power Amplifier The RF Power Amplifier is designed for high power radio applications. It offers excellent gain 40dB, and input power from 0dBm to 10dBm. The supply current is 2500mA, and the package type is available as either surface mount or through hole. This high power radio amplifier provides superior performance for radio frequency power amplification. Features: Wireless Power

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-25W

Place of Origin:China

High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-...

Brand Name:SWT

Model Number:SW-PA-04006000-33C

Place of Origin:China

...RF Power Amplifier for Electronic Warfare The 400-6000MHz 2W RF power amplifier is a high-performance, medium-power device suitable for various RF and wireless communication applications. Key features include: Wide Frequency Range: Covers 400MHz to 6000MHz, suitable for diverse communication and testing scenarios. 2W Output Power...

Brand Name:Ding Shen

Model Number:DS-LAM800-25W

Place of Origin:China

High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-...

Place of Origin:China

Brand Name:OEM

...-40°C. 2.This document stipulates the radio frequency and monitoring technical indicators of the 1.2G 50W power amplifier module, the definition of each port of the module, the appearance and structure of the module, etc. 3.This document applies to all

Brand Name:TeXin

Model Number:TX-50W

Place of Origin:Shenzhen China

.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.

Brand Name:Mitsubishi Electric Semiconductor

Model Number:2SC1971

Place of Origin:CHINA

2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components...

Brand Name:Huanuo

Model Number:HN-PA2W

Place of Origin:China

... Note Power amplifier Working Frequency (MHz) 800MHz+50MHz Max output power(dBm) 32dBm±1dBm (No ALC control) Passband group delay(ns) ≤50ns Gain(dB) 40dB±1dB Passband ...

Place of Origin:China

Brand Name:HuaNuo

Model Number:HN-PA20W_550

HN-PA20W_550:550MHz COFDM 20W RF power amplifier Radio frequency index: Frequency 550MHz Bandwidth range 30MHz Max output power 43±1.0dBm ALC control range ≥20dB Band group delay ≤50ns Gain 50±1.0dB Gain adjustment ...

Place of Origin:CHINA

Brand Name:EST

Model Number:LTE20W-B1

...RF Power Amplifier Module 80x50x16mm for LTE/NR Frequency Product Description: The latest Power Amplifier Module from our company has superior performance, offering 40dBm of gain (depending on different models), a working current of ≤0.8A, an input/output VSWR of ≤1.5, and a passband ripple of ≤2.0dB. Its compact size of 80x50x16mm makes it ideal for space-constrained applications. This digital power amplifier module is designed for RF

Brand Name:SZHUAHI

Model Number:YPM060742100C

Place of Origin:Jiangsu，China

...RF Power Amplifier Module Wireless Wifi Booster Extender of High Average Output Power Product Description YPM060742100C is a RF power amplifier module dedicated to 600-700MHz signal. This module has the advantages of high average output power, good in band flatness, and VSWR protection. Product Specifications Signal bandwidth: 600-700MHz Output power: 50dBm(100W) Operating Voltage: 28V Power...

Place of Origin:Guangdong, China

Brand Name:LDSK

... Frequency 6000-8000MH Working Bandwidth 2000MHZ Output Power 47±1dB Gain Efficiency ≤35% In-band Fluctuatio ≤3.0dB EVM Input and Output Standing Waves ACLR Swift Amplifier power supply RF response (amplifier on and off) The amplifier is turned on at

Brand Name:OEM

Model Number:PA700MHz-2W

Place of Origin:China

2W COFDM RF Power Amplifier for Long Range Drone UAV Video Link 12-18VDC Introduction The PA700MHz-2W is a 2 watts COFDM power amplifier specially designed for UAV video transmission, it features small size and light weight, and supports 690-710MHz ...

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...

Categories:RF Transistors

Country/Region:china

SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source Breakdown ...