pwm low power p channel mosfet

Brand Name:Lingxun

Model Number:LT40P04AD

Place of Origin:China

... Typ LT40P04AD TO-252 1 P -40 -40 ±20 -1 -2.5 10 13 15 22 Product Description: One of the key advantages of using the Low Voltage MOSFET is its ability to improve system efficiency. This is due to its low Rds(ON)

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: Introducing Low Voltage MOSFET from SGT, a breakthrough FOM optimization which covers more applications. This low gate voltage mosfet offers low power loss and low threshold voltage that allows it to be used in various motor driver, 5G...

Brand Name:Original Factory

Model Number:NTMFS4C024NT1G

Place of Origin:CN

Integrated Circuit Chip NTMFS4C024NT1G N-Channel Transistors 30V 5-DFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, ...

Brand Name:AOS

Model Number:AOD407

Place of Origin:original

AOD407 MOSFET Power Electronics Transistors 60V 50W Surface Mount P-Channel Package TO-252 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

...Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE  High power...

Brand Name:Hua Xuan Yang

Model Number:2N60- TO-220F

Place of Origin:ShenZhen China

Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM...

Brand Name:Infineon

Model Number:IRFS4227TRLPBF

Place of Origin:Original

...Power Transistors IRFS4227TRLPBF 200V 62A 26mOhm 70nC Qg N Channel Mosfet Applications • Hard switching PWM stages and resonant switching stages • Adapter,LCD&PDP TV, Lighting Description This HEXFET® Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low

Brand Name:AOSMD

Model Number:AO4449

Place of Origin:brand new

P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4.5V) General Description The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ...

Brand Name:IOR

Model Number:IRF3205PBF

Place of Origin:CHINA

...Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:AOSMD

Model Number:AO4449

Place of Origin:brand new

P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4.5V) General Description The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:Infineon

Model Number:IRF1404PBF

Place of Origin:China

...Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

Brand Name:original

Model Number:IRLML6401TRPBF

...Channel MOSFET SOT23-3 IRLML6401TRPBF Products Description: MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low...

Brand Name:INFINEON

Model Number:IPD075N03LG

Place of Origin:original

...channel MOSFET transistor. The following are the applications, conclusions, and parameters of this transistor: Application: Power switch and DC-DC converter Motor driver Automotive electronic equipment Industrial automation control system Conclusion: Efficient N-channel MOSFET transistor Low conduction resistance and leakage current High temperature working ability Low...

Brand Name:Original Brand

Model Number:IRLML6402TRPBF

Place of Origin:CN

... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The

Brand Name:Infineon Technologies

Model Number:SPW20N60C3

Place of Origin:China

Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working...

Brand Name:JUYI

Model Number:JY2605M

Place of Origin:China

...Channel Enhancement Mode Power MOSFET For BLDC Motor Controller GENERAL DESCRIPTION The product utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power...