power transistor and igbt 1200v

Brand Name:Infineon

Model Number:IKW25N120T2

Place of Origin:Original Factory

... discrete with anti-parallel diode in TO-247 package Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:

Place of Origin:Japan

Brand Name:FUJITSU

Model Number:7MBR15SA120B

...IGBT(1200V/15A/PIM) . Part NO: 7MBR15SA120B Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power...

Brand Name:Lingxun

Place of Origin:China

...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ideal for high-power applications. It has a voltage rating of 650V-1200V and can operate at an application frequency of 20KHz-60KHz, making it suitable for various applications. One of the key features of the High-Power IGBT...

Brand Name:SIEMENS

Model Number:6SY7000-0AC37

...-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules Description IC FLASH ...

Brand Name:IXYS

Model Number:IXYK110N120A4

... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The

Place of Origin:Original

Brand Name:Infineon Technologies

Model Number:IRG7PH42UDPBF

...IGBT Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 85A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A Power...

Place of Origin:CN

Brand Name:Original Factory

Model Number:FF50R12RT4

Automotive IGBT Modules FF50R12RT4 IGBT 1200V 50A Transistors Modules Chassis Mount [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Brand Name:Anterwell

Model Number:FGA25N120ANTD

Place of Origin:original factory

FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ...

Brand Name:Infineon

Model Number:FF450R12ME4

Place of Origin:TW

... Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 675 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 2.25 kW Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C

Model Number:FGA25N120ANTD

Place of Origin:original factory

FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ...

Brand Name:INFINEON

Model Number:FF300R12KT4

Place of Origin:N/A

FF300R12KT4 IGBT Modules IGBT 1200V 300A List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND 88E3019-A0-NAJ2C000 MARVELL CX28380-16 MNDSPEED SAF7741HV/125 NXP CS9211-VNG NSC NJM2368E JRC C10P20FR NIEC RDC19222-203 DDC ...

Brand Name:FUJI

Model Number:6DI30A-120

Place of Origin:JAPAN

...Transistors 30A, 1200V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR Electrical Characteristics Collector Current-Max (IC) 30A Collector-emitter Voltage-Max 1200V Configuration COMPLEX DC Current Gain-Min (hFE) 70A Fall Time-Max (tf) 3000 JESD-30 Code R-PUFM-X17 Number of Elements 6 Number of Terminals 17 Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR Package Style FLANGE MOUNT Polarity/Channel Type NPN Power...

Brand Name:Infineon

Model Number:FF50R12RT4

Place of Origin:China

...1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled Typical Applications • High Power Converters • Motor Drives • UPS Systems Electrical Features • Extended Operation Temperature Tvj op • Low Switching Losses • Low VCEsat • Tvj op = 150°C • VCEsat with positive Temperature Coefficient Mechanical Features • Isolated Base Plate • Standard Housing IGBT...

Brand Name:Infineon Technologies

Model Number:FF300R12KT4

Place of Origin:HUNGARY

FF300R12KT4 1200V 300A 62mm C-series module with fast trench fieldstop IGBT4 and optimized Emitter Controlled Diode 62mm C-series 1200 V, 300 A dual IGBT module with fast TRENCHSTOP™ IGBT4 and optimized Emitter Controlled diode. Also available with Thermal...

Brand Name:KRUNTER

Model Number:KWG600H12N4B

Place of Origin:CHINA

... exceptional performance in various industrial settings requiring efficient power management. This specific product falls under the category of IGBT Module and is known as the KWP75H12E4-7M IGBT Module Half-Bridge Circuit. It is engineered to cater to the

Brand Name:Infineon

Model Number:FF300R12KT4

Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.75...

Place of Origin:US

Brand Name:Original

Model Number:FGH40N60SMD

Product Detail Packaging Tube Part Status Active IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A Power - Max 349W ...

Brand Name:MISNCO

Model Number:LGK-60IGBT

Place of Origin:Beijing, China

... gate high power transistor IGBT and pulse width modulation (PWM) soft switching technology are used to design and manufacture. The cutting machine can cut all metal materials, ...