power mosfet switch

Brand Name:ROHM

Model Number:2SB1316TL

Place of Origin:Original

2SB1316TL Power Transistor low power mosfet switching power mosfet] Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the ...

Brand Name:ROHM

Model Number:2SB1316TL

Place of Origin:Original

2SB1316TL Power Transistor low power mosfet switching power mosfet] Features 1) DarliCM GROUPon connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. Packaging ...

Brand Name:TOSHIBA

Model Number:2SK3878

Place of Origin:CHINA

2SK3878 K3878 TO3P N-Channel Power MOSFET Switching Regulator IC List Of Other Electronic Components In Stock CKCA43JB1H103MT010N TDK LD1117AG-1.5V-A UTC M74HCT574B1R STM LC99808WE SANYO ...

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Power MOSFET is a type of field-effect transistor designed for use in high voltage, high power applications such as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, etc. It features high frequency operation, low on-resistance and excellent power switching performance. It is suitable for high voltage and high power switching...

Brand Name:Infineon Technologies

Model Number:IPD60R2K1CEAUMA1

Place of Origin:Multi-origin

... Trench MOSFET technology for excellent RDS(ON) and low gate charge. It provides superior switching performance with fast switching times and low-level gate charge. With a wide range of VDSS, this device is suitable for a variety of power applications.

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no

Brand Name:Hua Xuan Yang

Model Number:10N60

Place of Origin:ShenZhen China

...POWER MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES RDS(ON) < 1.0 Ω @ VGS = 10 V, ID = 5.0 A * Fast switching...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NUS5530MN

High Power MOSFET NUS5530MN Integrated with PNP Low VCE(sat) Switching Transistor [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize...

Brand Name:STMicroelectronics

Model Number:STP15810

Place of Origin:Shenzhen, China

... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Description: N Channel Power MOSFET Rad Hardened: No

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Brand Name:STMicroelectronics

Model Number:STF28NM50N

Place of Origin:China

...Power MOSFET 500V/28A Rating Low 0.135andOmega; Rds(on) Fast Switching Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS andamp; Motor Drives andnbsp; Features andbull; 100% avalanche tested andbull; Low input capacitance and gate charge andbull; Low gate input resistance andnbsp; Applications andbull; Switching applications andnbsp; Description These devices are N-channel Power MOSFETs...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:HXY9926A

...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electrical Characteristics (T =25°C unless otherwise noted) A.

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details

Brand Name:NXP

Model Number:BUK201-50Y

Place of Origin:Malaysia

...high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a Nominal load current (ISO) 5 pin plastic envelope, configured as a single high side switch. FEATURES Vertical power DMOS switch Low on-...

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...

Brand Name:Original Factory

Model Number:A2F12M12W2-F1

Place of Origin:CN

Power Module Fourpack Topology A2F12M12W2-F1 SiC Power MOSFET IGBT Module Full Bridge Description Of A2F12M12W2-F1 This A2F12M12W2-F1 is ACEPACK 2 power module in fourpack topology integrates advanced silicon carbide Power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching

Brand Name:ON Semiconductor

Model Number:NCS20074DTBR2G

... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to 18V) make it ideal for high-frequency switching applications. Applications: DC-DC Converters, Motor Drives,

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...