| Sign In | Join Free | My insurersguide.com |
|
All n channel super junction mosfet wholesalers & n channel super junction mosfet manufacturers come from members. We doesn't provide n channel super junction mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 22 products from n channel super junction mosfet Manufactures & Suppliers |
|
|
|
Brand Name:REASUNOS Place of Origin:Guangdong, CN N-Type Ultra Small Internal Resistance SJ MOSFET for UPS of Continuous Power Supply System *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, ... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
|
|
Brand Name:Infineon Model Number:SPA04N80C3XKSA1 Place of Origin:China SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; ... |
TOP Electronic Industry Co., Ltd.
|
|
|
Brand Name:JUYI Model Number:JY11M Place of Origin:China JUYI N Channel Super Trench Power MOSFET with fast switching and reverse body recovery GENERAL DESCRIPTION The product utilizes the latest super trench processing techniques to achieve the high cell density and reduces the on-resistance with high ... |
Shanghai Juyi Electronic Technology Development Co., Ltd
Shanghai |
|
|
Categories:PMIC Chip Country/Region:china ... of high voltage Super Junction MOSFET with FRD 600V 70A 41mΩ Si Super junction MOSFET with Fast Recovery Diode Applications: Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-... |
Angel Technology Electronics Co
Hongkong |
|
|
Brand Name:Anterwell Model Number:TK10P60W Place of Origin:original factory MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ... |
Anterwell Technology Ltd.
Guangdong |
|
|
Brand Name:Original Factory Model Number:NVHL050N65S3HF Place of Origin:CN ...Channel MOSFETs Transistors TO-247-3 Product Description Of NVHL050N65S3HF NVHL050N65S3HF is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. Specification Of NVHL050N65S3HF Part Number NVHL050N65S3HF Series Automotive, AEC-Q101, SuperFET® III FET Type N-Channel Technology MOSFET... |
ShenZhen Mingjiada Electronics Co.,Ltd.
|
|
|
Brand Name:Original brand Model Number:NVHL040N65S3F Place of Origin:Original ... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
|
|
Model Number:TK10P60W Place of Origin:original factory MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ... |
ChongMing Group (HK) Int'l Co., Ltd
|
|
|
Brand Name:Infineon Technologies Model Number:IRFP7530PBF Place of Origin:original ... drain current of 61A and a maximum drain source resistance of 0.0084 Ohms. It offers a maximum power dissipation of 225W and a maximum junction temperature of 175°C |
Shenzhen Sai Collie Technology Co., Ltd.
|
|
|
Brand Name:Hua Xuan Yang Model Number:HXY4409 Place of Origin:ShenZhen China ... application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
|
|
Brand Name:VISHAY Model Number:SUD50P06-15L-E3 Place of Origin:Original Manufacturer ...Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET 2, 175 °C Junction |
Shenzhen Huahao Gaosheng Technology Co., Ltd
|
|
|
Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:RS3A THRU RS3M RS3A THRU RS3M SURFACE MOUNT FASTRE COVERY RECTIFIER FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement ... |
Beijing Silk Road Enterprise Management Services Co.,LTD
|
|
|
Brand Name:Maplesemi Model Number:SLH60R080SS Place of Origin:Original General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
|
|
|
Brand Name:DIODES Model Number:2N7002DW-7-F Place of Origin:CHINA ...MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.21.00.95 Automotive No PPAP No Product Category Small Signal Configuration Dual Channel Mode Enhancement Channel Type N Number of Elements per Chip 2 Maximum Drain Source Voltage (V) 60 Maximum Gate Source Voltage (V) ±20 Maximum Gate Threshold Voltage (V) 2 Operating Junction... |
Sunbeam Electronics (Hong Kong) Limited
|
|
|
Brand Name:Infineon Model Number:IRFR540ZTRPBF Place of Origin:CHINA IRFR540ZTRPBF 1.Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free 2.Description This HEXFET® Power MOSFET utilizes the latestprocessing ... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
|
|
Brand Name:Original Model Number:LN2302BLT1G Place of Origin:China ... RDS(ON) 3. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 4. N-channel 20V 2.8A Technological Parameters: Drain-source resistance 0.085 Ω polarity N |
Shenzhen Res Electronics Limited
Guangdong |
|
|
Brand Name:VISHAY Model Number:SUD50P06-15L-E3 Place of Origin:Malaysia .../95/EC Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
|
|
Place of Origin:MALAYSIA Brand Name:Standard Brand Model Number:APT77N60JC3 APT77N60JC3 is a Super Junction MOSFET Why Chose Mega Source ? Quality At the heart of Mega Source Elec. lies a commitment to total customer satisfaction with a secure quality system .With ... |
Mega Source Elec.Limited
|
|
|
Categories:Onsemi Ic Country/Region:china ...Function: Single N-Channel Power MOSFET Drain-Source Breakdown Voltage: 100V Continuous Drain Current: 10A On-Resistance: 10mΩ (typ) Operating Junction Temperature: -40°C to 150°C Package: SO-8 The NCP1060AD100R2G is an N-channel power MOSFET from ON ... |
ZhongHao Industry Limited
|
|
|
Brand Name:IXYS Model Number:IXTH200N10T Place of Origin:Original Factory ...MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |