n channel sic power semiconductor

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Reliable High Power Semiconductor for Performance-driven Applications *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {...

Brand Name:Original Factory

Model Number:SCT4045DRHRC15

Place of Origin:CN

...channel SiC Power MOSFET​ Product Description Of SCT4045DRHRC15 SCT4045DRHRC15 is Automotive Grade N-channel SiC power MOSFET Transistors. Specification Of SCT4045DRHRC15 Part Number: SCT4045DRHRC15 Technology: SiC Mounting Style: Through Hole Package / Case: TO-247-4L Transistor Polarity: N-Channel Number of Channels: 1 Channel...

Brand Name:Analog Devices Inc.

Model Number:AD7124-4BRUZ-RL7

Place of Origin:Mult-origin

AD7124-4BRUZ-RL7 - 24-Bit, 4-Channel, Low Noise, Low Power Analog-to-Digital Converter Features: • 24-bit resolution with no missing codes • Low noise: 0.3μVrms (typical) • Low power: 1.8mA (typical) • 4 differential or 8 single-ended input channels • ...

Brand Name:tankblue

Model Number:4h-n

Place of Origin:CHINA

...sic wafers dummy Prime Production grade for SBD MOS Device 1. Comparison of third-generation semiconductor materials SiC crystal is a third-generation semiconductor material, which has great advantages in low-power, miniaturization, high-voltage and high-frequency application scenarios. The third-generation semiconductor...

Brand Name:ZMSH

Model Number:Semi-insulating SiC wafers 3inch

Place of Origin:China

...SiC substrate is a high-performance semiconductor material with a wide range of applications. It derives its name from its growth on the 4H crystal structure. This substrate exhibits exceptional electrical characteristics, including high resistivity and low carrier concentration, making it an ideal choice for radio frequency (RF), microwave, and power electronic devices. Key features of the 4-H Semi-Insulating SiC

Brand Name:Vishay Semiconductor

Model Number:SIHF10N40D-E3

... N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 Automotive No PPAP No Product Category Power MOSFET Configuration Single Channel Mode Enhancement Channel Type...

Categories:Semiconductor Wafer Chip

Country/Region:china

This is the leftover material after Jin Yuan is cut, and the wafer can also be taken out. Each chip can take about 130 wafers, and the box is sent by air in a box of three kilograms. It can also be shipped in domestic ports. If necessary, please contact...

Brand Name:Torex Semiconductor Ltd

Model Number:XC6124E628MR-G

Product Details ■ GENERAL DESCRIPTION The XC61C series are highly precise, low power consumption voltage detectors, manufactured using CMOS and laser trimming technologies. Detect voltage is extremely accurate with minimal temperature drift. Both CMOS and ...

Model Number:LA4625

Brand Name:Original

Place of Origin:US

Product Detail Packaging Tube Part Status Obsolete Type Class AB Output Type 2-Channel (Stereo) Max Output Power x Channels @ Load 13.5W x 2 @ 4 Ohm Voltage - Supply 7.2V ~ 20V Features Depop, Short-Circuit and Thermal Protection, Standby Mounting Type Thr...

Brand Name:ON

Model Number:NTH4L020N090SC1

Brand Name:original

Model Number:LM3478MM

Place of Origin:Original Manufacturer

... Quick Detail: High Efficiency Low-Side N-Channel Controller for Switching Regulator Description: The LM3478 is a versatile Low-Side N-FET switching regulator controller. It is suitable for use in topologies requiring ...

Brand Name:Original

Model Number:AD8676BRZ-REEL7

Place of Origin:Original

AD8676BRZ-REEL7 Integrated Circuit Chip IC Power Amplifier Module Semiconductors Specifications: GBP - Gain Bandwidth Product: 10 MHz SR - Slew Rate: 2.5 V/us CMRR - Common Mode Rejection Ratio: 130 dB Output Current per Channel: 20 mA Ib - Input Bias ...

Brand Name:PAM-XIAMEN

Place of Origin:China

... generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped ,

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

...the production of advanced semiconductor devices and high-power electronics. This ultra-high purity poly-crystalline SiC is specifically engineered for applications requiring exceptional thermal conductivity, electrical stability, and mechanical strength.

Brand Name:HMT

Model Number:4inch

Place of Origin:china

SiC Ingots Manufacturer 4 inch SiC Ingot China As the professional manufacturer of SiC ingots, HMT suppy 4 inch and 6 inch SiC ingots with mechnical grade and production grade. SiC wafer is the foremost semiconductor material that can operate at higher temperature, power level, and voltage. These unique properties of SiC can apply to variety applications like Power...

Brand Name:Qorvo

Model Number:QPA1009

QPA1009 RF Amplifier 10.7-12.7 GHz 17W PA PHS Qorvo QPA1009 17W Wideband GaN on SiC Power Amplifier Qorvo QPA1009 17W Wideband GaN on SiC Power Amplifier operates from 10.7GHz to 12.7GHz, delivering 42dBm of saturated output power and 16dB of large signal ...

Brand Name:ON Semiconductor

Model Number:FDMC510P

Place of Origin:CHINA

...Channel 20V POWER MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON), switching performance and ruggedness. FET Type P-Channel...

Brand Name:HTOE

Model Number:LDAC3-0808-100W

Place of Origin:Beijing, China

100 watt Horizontal Array , Macro-channel Water-cooled Semiconductor Laser Diode LDA series high power packaged bars provide OEM customers with scalable power up to kilowatts for pumping, industrial, medical and applications. The packaged laser bars can ...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MBM50F12

...channel IGBT Description: Silicon N-channel IGBT Applications: * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode. * High reliability, high durability module. * High thermal fatigue durability (Al-SiC...