n channel mosfet low threshold voltage

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Power Loss SGT Process Application Low Rds(ON) Energy Storage Field Effect Transistor *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, ...

Brand Name:Lingxun

Model Number:LT50N06AP

Place of Origin:China

... MAX Typ Typ LT50N06AP TO-220C 1 N 50 60 ±20 1 2.5 12 17 16 25 Product Description: In addition to its low power consumption, the Low Voltage MOSFET is also RoHS compliant, ensuring that it meets the latest standards for

Brand Name:SHENZHENFREESCALE

Model Number:AOD5N50

Place of Origin:Original

...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. ...

Brand Name:SHENZHENFREESCALE

Model Number:AOD5N50

Place of Origin:Original

...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. ...

Brand Name:IXYS

Model Number:IXTQ130N10T

Place of Origin:original

...: TO-247 Product Description: The IXYS IXTQ130N10T is an N-channel MOSFET with a max drain source voltage of 100V and a max drain current of 130A. This device offers a low RDS(on) of 0.01 Ohm and is housed in a TO-247 package. It is designed for use in

Brand Name:Infineon Technologies

Model Number:BSC020N03MSG

Place of Origin:USA

...MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 1.7 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage...

Model Number:NTMFS4833NT1G

Place of Origin:America

Brand Name:ON

... N-channel MOSFET Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans MOSFET N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - Channel Dissipated power 125 W Threshold voltage 1.5 V input capacitor 5600pF @12V Drain-source voltage 30 V

Brand Name:Microchip

Model Number:Onsemi

...channel MOSFET with a maximum drain current of 11A and a low on-state resistance of 0.109 ohms. Specification: Maximum Voltage Rating: 900V Maximum Drain Current: 11A On-State Resistance: 0.109 ohms Gate Threshold Voltage: 4V (typical) Features: High voltage capability Low...

Brand Name:Hua Xuan Yang

Model Number:AP3N10BI

Place of Origin:ShenZhen China

...Channel Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET...

Brand Name:Original brand

Model Number:BSZ037N06LS5ATMA1

Place of Origin:Original

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Features •OptimizedforhighperformanceSMPS,e.g.syncrec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249...

Brand Name:onsemi

Model Number:NTTFS5820NLTAG

MOSFET Single N-CH 60V 11A, 37A Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: WDFN-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 37 A Rds On - Drain-Source Resistance: 11.5 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold

Brand Name:Original Brand

Model Number:IRF3710PBF

Place of Origin:Original Manufacturer

...MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 57 A Rds On - Drain-Source Resistance: 23 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold

Brand Name:INFINEON

Model Number:IPD80R1K4P7

Place of Origin:original

...resistance and high switching speed, making it very suitable for use in low voltage applications. Conclusion: IPD80R1K4P7 has the following characteristics: Very low switching and conduction losses; High voltage limit, capable of operating at high voltage;

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AOD4454

Place of Origin:CHINA

... low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current -

Brand Name:Original Factory

Model Number:BSZ036NE2LSATMA1

Place of Origin:CN

... low gate and output charge, combined with very low on-state resistance and small package size, make OptiMOS™ 25V the best choice for demanding server, datacom and communication voltage regulator solutions. Specification Of BSZ036NE2LSATMA1 Part Number:

Brand Name:Infineon

Model Number:IRFB260NPBF

Place of Origin:China

...Channel MOSFET 200V 46A Ultra-Low 19mΩ Rds(on) TO-220 Package Logic Level Fast Switching High Robustness Avalanche Rated for Motor & Power Conversion Features 1:High Voltage Capability: A drain-source voltage (Vds) of 200V, making it suitable for high-voltage...

Brand Name:Onsemi

Model Number:NVMTS1D2N08H

Place of Origin:Original

... Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Specifications Product Attribute Attribute Value Product Category: MOSFET Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current:

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

... S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The