n channel mosfet high side switch

Brand Name:Hua Xuan Yang

Model Number:HXY1904S

Place of Origin:ShenZhen China

....5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) High Current Transistor Applications Power Management for DC/DC Switching application Ordering and Marking Information S 1904 YYXXXJWW G Package Code S:

Brand Name:Infineon

Model Number:IRF7473TRPBF

Place of Origin:original

IRF7473TRPBF MOSFET Power Electronics N-Channel 100V High Speed Switching Package 8-SOIC FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6.9A (Ta) Drive ...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

JY21L High and Low side driver, high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. General Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating ...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

Product Introduction of Infineon IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-...

Brand Name:IR or Infenion

Model Number:IRFP4227PBF

Place of Origin:CN

...CHANNEL MOSFET TRANSISTOR TO-247AC IRFP4227PBF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low QG for Fast Response High Repetitive Peak Current Capability for Reliable Operation Short Fall & Rise Times for Fast Switching...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch...

Brand Name:Ti

Model Number:FDS6681Z

FDS6681Z Mosfet Power Transistor MOSFET 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

IRF640NPBF DIP Trans N Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

..., including solar inverter, high-voltage DC/DC converter, motor driver, UPS power supply, switching power supply, and charging pile. It has excellent performance in terms of high voltage, high frequency, and low power loss. In addition, the process is

Brand Name:Infineon

Model Number:IRF1404PBF

Place of Origin:China

...Channel MOSFET with Ultra-Low 1.7mandOmega; RDS(on) TO-220 Package 100% Avalanche Tested Fast Switching High Power Density andamp; Industrial-Grade Reliability andnbsp; Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175anddeg;C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free andnbsp; Description Seventh Generation HEXFETandreg; Power MOSFETs...

Brand Name:Anterwell

Model Number:FQPF10N20C

Place of Origin:original factory

...Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high

Brand Name:INFINEON

Model Number:IPD082N10N3

Place of Origin:original

...channel MOSFET transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load switch Used as a switch for converters and regulators Conclusion: High voltage capability: Vds=100V Low conduction resistance: Rds (on)=8.2m Ω (typ.) Fast switching speed: td (on)=16ns (typ.), td (off)=60ns (typ.) High...

Brand Name:Analog Devices Inc.

Model Number:LTC4412ES6#TRMPBF

Place of Origin:China,GuangDong

...Switch IC P-Channel 2:1 Automatic Switching Between DC Sources PRODUCT DESCRIPTION The LTC®4412 controls an external P-channel MOSFET to create a near ideal diode function for power switchover or load sharing. This permits highly efficient OR’ing of multiple power sources for extended battery life and low self-heating. When conducting, the voltage drop across the MOSFET...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

...Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE  High...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

JY21L High and Low side driver, high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. General Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating ...

Brand Name:ST Micro electronics

Model Number:STI20N60M2-EP

Place of Origin:Shenzhen, China

...% avalanche tested. Zener-protected. Absolute Maximum Ratings : Switching applications. Tailored for very high frequency converters (f > 150 kHz). Description : This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP)

Brand Name:Original

Model Number:NTMFS4C09NT1G

Place of Origin:China

High Quality N-Channel MOSFET DFN-5 NTMFS4C09NT1G Product Description Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free...

Brand Name:Microchip

Model Number:Onsemi

...channel MOSFET with a maximum drain current of 11A and a low on-state resistance of 0.109 ohms. Specification: Maximum Voltage Rating: 900V Maximum Drain Current: 11A On-State Resistance: 0.109 ohms Gate Threshold Voltage: 4V (typical) Features: High voltage capability Low on-state resistance Fast switching...

Brand Name:JUYI

Model Number:JY16M

Place of Origin:China

General Description: The JY16M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...