mosfets with rf power capability

Model Number:MRF9030

Place of Origin:original factory

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF151G

MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Brand Name:MOTOROLA

Model Number:MLP1N06CLG

Place of Origin:Original

Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage ...

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode...

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:Infineon Technologies

Model Number:IRFU9120NPBF

Place of Origin:original

... of only 7.6nC and an on-resistance of only 35mΩ. The MOSFET is capable of operation at high current levels, up to 10A, making it well-suited for a variety of applications. Features: - Low-voltage operation - Low on-resistance - ...

Brand Name:VBE

Place of Origin:CHINA

... RF Power Amplifier Module with built-in VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness Product Description: RF Power Amplifier Module Our RF Power Amplifier Module is designed to provide efficient, high-power RF jamming capabilities...

Brand Name:Anritsu

Model Number:ML2437A

Place of Origin:Japan

...RF Power Meter With Graphics Display Ruggedized Housing Product Overview The ML2437A and ML2438A Power Meters combine the advantages of thermal meter accuracy, diode meter speed, and peak power meter display graphics. The result is a single instrument that samples at more than 35K per second and achieves 90 dB dynamic range with a single sensor. These meters include graphics display capability...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:TeXin

Model Number:TX-100W

Place of Origin:Shenzhen China

...rf power amplifier bidirectional anti drone module This is long N type connector high power 100W bidirectional RF power amplifier module ,the module main features is that stable input 0-10dB,longer output connector and capable of achieving ultra-wide bandwidth.Customers can choose a solution without signal source or with external signal source according to their needs. No signal source build in the power

Brand Name:Sinoscite

Model Number:SNSD-208-010265

Place of Origin:Sichuan, China

... quality, Low price, Fast delivery. 4.Custom design available upon request. 5.Competitive price. 6. High powercapacity,. excellent isolation. Rf Power Divider quick detalis: Place of Origin:Sichuan, China Brand Name:Sinoscite Model Number:BJ320(WR28)

Brand Name:NXP Semiconductors

Model Number:AFT05MS003NT1

... MOSFET Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET ...

Brand Name:SWT

Model Number:SWT-TWTPA- 900010000-68C

Place of Origin:China

...a high-power microwave amplifier designed for applications requiring significant power output in the 9-10GHz frequency band. This device employs Traveling Wave Tube (TWT) technology as the core amplification method, ensuring ...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Brand Name:Original

Model Number:NCE8580

... choice for those in the electronics field. As a seller in this industry, we can tell you that the NCE8580 is a reliable and efficient choice for a variety of applications. Pros: - High-performance capabilities: With its low on-resistance,

Model Number:PA5725T5850M 10W-12V

Place of Origin:China

Brand Name:MXT

High Power Radio Amplifier 5725MHz-6GHz P.A.E. 20% Product Description: Radio Frequency Power Amplifier (RFPA) Our Radio Frequency Power Amplifier (RFPA) is designed to provide maximum power output capabilities with high dynamic range for radio ...

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency...

Brand Name:ZD

Model Number:ZD-PSFG-727-200-02NF

Place of Origin:china

...RF Power Divider Splitter Power divider is used in microwave system to split the input power, it’s widely used in mobile communication and satellite, radar, electronic countermeasure, test and measurement. We have strong developing and testing capabilities, our dividers has the advantages of good frequency characteristic, stable performance, high precision, high power...

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Brand Name:MYT

Model Number:433Mhz 20W GaN Anti Drone Module

Place of Origin:China

...RF Power Amplifier High-performance RF power amplifier module designed for anti-drone systems and FPV defense applications. This GaN-based module delivers 20W output power at 433MHz frequency for effective drone countermeasures. Key Features 433MHz frequency operation (428-438MHz range) 20W output power capability...