mosfet with sr6 package

Brand Name:Infineon

Model Number:BSC011N03LSIATMA1

Place of Origin:original

BSC011N03LSIATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 30 V Package 8-PowerTDFN FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 37A (Ta), 100A (Tc) Drive ...

Brand Name:STMicroelectronics

Model Number:STD2N105K5

...: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 1.05 kV ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:MSCSM120AM08CT3AG

Automotive IGBT Modules MSCSM120AM08CT3AG SiC Power MOSFET Modules SP3F Package [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Model Number:TK30S06K3L(T6L1,NQ

Toshiba MOSFET Product Guide 2009-9 Toshiba's MOSFET devices meet the needs of a wide range of ultra-high-density applications. They offer superior frequency and switching characteristics due to the absence of carrier storage effect, ruggedness without ...

Brand Name:JUYI

Model Number:JY09M

Place of Origin:China

JY09M N Channel Enhancement Mode Power MOSFET General Description Employing cutting-edge trench processing techniques, the JY09M attains remarkable cell density and minimizes on-resistance while featuring a low gate charge. These characteristics ...

Brand Name:Kentie

Model Number:SR6-2RS

Place of Origin:China

SR6-2RS Stainless Steel Sealed Bearing 3/8"x7/8"x9/32" inch SR6-2RS Stainless Steel Sealed Bearing is made of Stainless Steel, each bearing are rubber sealed from both sides to protect the bearing from dust or any possible contamination, also bearing is pre-lubricated. Specifications of SR6-2RS Bearing Model SR6-2RS bearing Outer Diameter 7/8" Inner Bore 3/8" Width 9/32" Material Stainless Steel 420 Seals 2RS Lubrication Grease/oil Package

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive ...

Brand Name:Microchip Technology

Model Number:APT10090BLL

Place of Origin:ORIGINAL

...Technology MOSFET FG MOSFET 1000V TO-247 RoHS Manufacturer: Microchip Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Packaging: Tube Brand: Microchip Technology Product Type: MOSFETs Subcategory...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET...

Model Number:GP60S50X

Place of Origin:Guangdong, China

Brand Name:Original

... up to 600V, with a current capacity of 50A, making it an ideal choice for demanding projects that require high-performance components. Designed with a TO-247 package, this MOSFET is reliable and easy to

Brand Name:Hua Xuan Yang

Model Number:AOD478

Place of Origin:ShenZhen China

...MOSFET​ General Description The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Parameters Part Number Status Package...

Brand Name:ROHM

Model Number:2SB1316TL

Place of Origin:Original

...mosfet switching power mosfet] Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. Packaging specifications and hFE Type 2SB1580 2SB1316 Package...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMS007N08LC

High Power MOSFET FDMS007N08LC Power MOSFET 80V Single N Channel, 84A, 6.7mΩ in Power 56 Package. [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Brand Name:INFINEON

Model Number:IPZ40N04S5L-7R4

INFINEON Chip IPZ40N04S5L-7R4 MOSFET N-CH 40V 40A 8TSDSON Manufacturer: Infineon Product Category: MOSFET Technology: Si Package / Case: TSDSON-8 Packaging: Reel Company introduction: is a subsidiary of Chusinly (Hong Kong) Ltd., headquartered in 2004...

Brand Name:JUYI

Model Number:JY15M

Place of Origin:China

JY15M N Channel 40V Enhancement Mode Power MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY15M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with high repetitive avalanche rating...

Brand Name:Infineon

Model Number:IRF7404TRPBF

Place of Origin:Original Factory

Original IRF7404TRPBF SOP8 P Channel 20V 7.7A SMD MOSFET Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, ...

Brand Name:PANJIT

Model Number:ER1002FCT

Place of Origin:Original

ER1002FCT ISOLATION SUPERFAST RECOVERY RECTIFIERS dual power mosfet audio power mosfet FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ♦ Exceeds environmental ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package...

Brand Name:Huixin

Model Number:MMBT7002K

Place of Origin:China

...MOSFET 60V 115mA N-Channel SC-70 SOT-323 These Devices are Pb−Free and are RoHS Compliant , Ultra−Small Surface Mount Package,Low Input/Output Leakage, Fast Switching Speed,Improved system efficiency. MMBT7002W SOT-323 Datasheet.pdf FEATURES 1. High density cell design for low RDS(ON) 2. Voltage controlled small signal switch 3. Rugged and reliable 4. High saturation current capability 5. Small Footprint Surface Mount Package

Place of Origin:US

Brand Name:Original

Model Number:2SK1058/2SJ162

...Packaging Tube Part Status Active FET Type N-Channel/P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 160V Current - Continuous Drain (Id) @ 25°C 7A (Ta) Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V Power Dissipation (Max) 100W (Tc) Operating Temperature 150°C (TJ) Supplier Device Package...