mosfet transistor for rf applications

Brand Name:Anterwell

Model Number:2SC1972

Place of Origin:original factory

...rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in Most Applications...

Brand Name:ST

Model Number:PD57018-E

Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage...

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ...

Brand Name:Vishay / Siliconix

Model Number:IRFP260

...MOSFET Transistors Unlock the Pros and Cons of IRFP260 for Your Electronics Projects If you're looking for high-powered MOSFET transistors to use in your electronics projects, you might want to consider the IRFP260 model. This powerful semiconductor device is designed to handle high voltages and currents, making it ideal for a wide range of applications, from power supplies and motor control to audio amplifiers and RF

Model Number:MRF9030

Place of Origin:original factory

...RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications...

Brand Name:NXP Semiconductors

Model Number:AFT05MS003NT1

...MOSFET Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET Transistors Transistor...

Brand Name:Hua Xuan Yang

Model Number:G120P06LR1D

Place of Origin:ShenZhen China

...Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities. Many power MOSFETs...

Brand Name:Freescale

Model Number:MRFE6VP5600HR5

Place of Origin:USA

... RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They...

Brand Name:JC

Model Number:OSFZ44N

Place of Origin:Jiangxi, China

Mos Audio Mosfet Transistor / High Frequency Transistor Amplifier Audio Mosfet Transistor Application DC motor control Automotive applications Uninterruptible power supply Absolute Maximum Ratings (Tc=25°C) Symbol Parameters Ratings Unit VDSS Drain-Source...

Brand Name:Infineon Technologies

Model Number:BSC060N10NS3G

Place of Origin:original

BSC060N10NS3G MOSFET Power Electronics High-Performance Low-Power Consumption Transistor for Industrial Applications IRF6217TRPBF - N-Channel MOSFET Transistor Parameters: VDS (Max) = 100V VGS (Max) = ±20V ID (Max) = 7.8A RDS (on) (Max) = 0.068Ω Package ...

Brand Name:ST

Model Number:STPS15L30C-TR STS1DNC45 STV6419AG

Place of Origin:Original

...mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications...

Brand Name:VISHAY

Model Number:S525T-GS08

Place of Origin:USA

VISHAY IC S525T-GS08 Surface Mount SOT-223 S525T Product Paramenters Manufacturer: Vishay Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 mA Vds - Drain-Source Breakdown Voltage: ...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

...Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications...

Brand Name:original

Model Number:IRFR1018EPBF

Place of Origin:original

...MOSFET Transistors Si TO-252-3 original in stock Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Product Attribute Attribute Value Product Category: MOSFET

Brand Name:Original Factory

Model Number:IAUTN06S5N008T

Place of Origin:CN

...MOSFETs Transistors PG-HDSOP-16 Product Description Of IAUTN06S5N008T IAUTN06S5N008T is optiMOS™ 5 Automotive Power MOSFET, 60 V Transistors,the package is PG-HDSOP-16. Specification Of IAUTN06S5N008T Part Number: IAUTN06S5N008T VDS: 60V RDS(on): 0.79mΩ ID (chip limited): 503A Package: PG-HDSOP-16 Operating Temperature: 175°C Features Of IAUTN06S5N008T OptiMOS™ power MOSFET for automotive applications

Model Number:IRF1404PBF

Place of Origin:China

Brand Name:original

Transistor MOSFET N channel 162A 40V 4MOHM MOS tube IRF1404PBF Products Description: 1. INFINEON IRF1404PBF transistor, MOSFET, N channel, 162 A, 40 V, 4 MoHM, 10 V, 4 V 2. The to-220 package is universally preferred for allcommercial-industrial applications...

Model Number:BFP740FH6327

...RF Transistor The BFP740F is a low noise silicon germanium bipolar RF transistor designed for high-frequency applications. It offers excellent performance characteristics suitable for various RF circuits.Product Attributes Brand: Infineon Technologies Material: Silicon Germanium Origin: GermanyTechnical Specifications Feature Description Value Conditions Frequency Page Product Type Low Noise RF

Brand Name:INFINEON

Model Number:IPD80R1K4P7

Place of Origin:original

...resistance and high switching speed, making it very suitable for use in low voltage applications. Conclusion: IPD80R1K4P7 has the following characteristics: Very low switching and conduction losses; High voltage limit, capable of operating at high voltage;

Brand Name:AOS

Model Number:AO4447A

Place of Origin:CHINA

AO4447A Electronic Integrated Circuits Transistor AOS 1.General Description The AO4447A uses advanced trench technology to provide excellent RDS(ON)with low gate charge.This device is ideal for load switch and battery protection applications. RoHS and ...

Model Number:MRF175LU

Place of Origin:Malaysia

Brand Name:KAIGENG

MRF175LU N/A Electronic Components IC MCU Microcontroller Integrated Circuits MRF175LU #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...