mosfet transistor 160v voltage rating

Brand Name:NSC

Model Number:LP2950CZ-5.0

Place of Origin:Original

LP2950/LP2951 Series of Adjustable Micropower Voltage Regulators General Description The LP2950 and LP2951 are micropower voltage regulators with very low quiescent current (75µA typ.) and very low dropout voltage (typ. 40mV at light loads and 380mV at ...

Brand Name:SEMIKRON

Model Number:SKKT460/22E

Place of Origin:Germany

... Transistor (IGBT) module that combines MOSFET high input impedance with bipolar transistor low conduction loss for precise, efficient power control in demanding industrial applications. Key Specifications Parameter Value Maximum Voltage Rating 2300V...

Model Number:LM350T

Place of Origin:original factory

LM350 3.0 A, Adjustable Output, Positive Voltage Regulator THREE−TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR The LM350 is an adjustable three−terminal positive voltage regulator capable of supplying in excess of 3.0 A over an output voltage range of ...

Place of Origin:US

Brand Name:Original

Model Number:2SK1058/2SJ162

... Renesas Electronics America Packaging Tube Part Status Active FET Type N-Channel/P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 160V Current - Continuous Drain (Id) @ 25°C 7A (Ta) Vgs (Max) ±15V Input Capacitance (Ciss...

Brand Name:JC

Model Number:OSFZ44N

Place of Origin:Jiangxi, China

...Mosfet Transistor / High Frequency Transistor Amplifier Audio Mosfet Transistor Application DC motor control Automotive applications Uninterruptible power supply Absolute Maximum Ratings (Tc=25°C) Symbol Parameters Ratings Unit VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage...

Brand Name:ON Semiconductor

Model Number:MMBT5551LT1G

Place of Origin:China

MMBT5551LT1G High Voltage NPN Transistor 160V VCEO, 300mA IC Low Saturation Voltage SOT-23 Package Halogen-Free Green Material Ideal for Amplification & Switching Circuits Features S and NSV Prefix for Automotive and Other Applications Requiring Unique ...

Model Number:MMBT5551-AU_R1_000A2

Product Overview The MMBT5551-AU is an NPN Silicon planar design high voltage transistor. It features a collector-emitter voltage of 160V and a continuous collector current of 600mA. This AEC-Q101 qualified component is lead-free in compliance with EU RoHS...

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:onsemi

Model Number:FDMS86350

Place of Origin:Multi-origin

... gate charge, and fast switching performance. The device is also rated for a maximum drain current of 30A and a maximum drain-source on-state resistance of 0.018 ohms. Key Features: • 100V drain-source voltage rating • 30A maximum drain current • 0

Brand Name:Original

Model Number:FQPF10N65C

...MOSFET FQPF10N65C - The Ultimate MOSFET for All Your Power Needs Introducing the FQPF10N65C, a powerful N-channel MOSFET that is designed with extreme efficiency and reliability in mind. This high-performance MOSFET is built to handle high voltage applications, making it the ultimate choice for your power needs. With a drain-source voltage (VDS) rating of 650 volts, the FQPF10N65C is designed to handle high voltages

Brand Name:IOR

Model Number:IRF640NSTRLPBF

Place of Origin:CN

...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

... A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C ...

Brand Name:VISHAY

Model Number:IRFP240PBF

Place of Origin:USA

IRFP240PBF 200V 20A 0.18Ohm Rated Power MOSFET Transistor TO - 247 Dynamic DV/DT Rating Repetitive Avalanche HEXFETO Power MOSFET ●Dynamic dv/dt Rating ●Repetitive Avalanche Rated ●Isolated Central Mounting Hole ●Fast Switching ●Ease of ...

Brand Name:original

Model Number:FCB36N60NTM

Place of Origin:original

... Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 36 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage:

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...

Brand Name:Infineon

Model Number:IRF7404TRPBF

Place of Origin:Original Factory

Original IRF7404TRPBF SOP8 P Channel 20V 7.7A SMD MOSFET Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, ...

Brand Name:Original Factory

Model Number:IXTH24N50L

Place of Origin:CN

... Operation, the package is TO-247 (IXTH). Specification Of IXTH24N50L Part Number IXTH24N50L FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On,

Brand Name:STMicroelectronics

Model Number:STB24N60DM2

...Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage...

Brand Name:Original Factory

Model Number:XC7K410T-3FFG676E

Place of Origin:China

Transistor N Channel MOS Transistor IMBG65R039M1HXTMA1 New Parts MOSFET Transistors Product Description Real 6-input look-up tables (LUTs) Memory capability within the LUT Register and shift register functionality Product Specifications Part Number XC7K410T-3FFG676E Moisture Sensitive: Yes Number of Logic Array Blocks - LABs: 31775 LAB Operating Supply Voltage: 1.2 V to 3.3 V Maximum Current: 10 MA Analog Supply Voltage...