mosfet fet with high voltage

Brand Name:Infineon Technologies

Model Number:IRFS3607TRLPBF

Place of Origin:original

...MOSFET Power Electronics High Voltage Low RDS on 55V 100A N Channel FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9mOhm @ 46A, 10V Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3070 pF @ 50 V FET

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

...MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; Features New revolutionary high voltage technology Extreme dv/dt rated High...

Brand Name:CANYI

Model Number:AP50P03NF

Place of Origin:shenzhen, China

...MOSFET field effect high voltage transistor AP50P03NF.pdf Description The AP50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications. General Features V DS = -30V,I D = -50A R DS(ON) < 18mΩ @ V GS =-4.5V R DS(ON) < 13mΩ @ V GS =-10V High...

Brand Name:MPS

Model Number:MP2451DT-LF-Z

Place of Origin:Original & New

...internal high-side high voltage power MOSFET switching regulator Description The MP2451 is a high frequency (2MHz) stepdown switching regulator with integrated internal high-side high voltage power MOSFET. It provides single 0.6A (or less) highly efficient...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS ...

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply ...

Model Number:UJ3C120150K3S

...configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si super-junction devices. The

Brand Name:Infineon / IR

Model Number:IRFP250N

...MOSFET The Perfect Solution for High Voltage and High Current Applications Are you looking for a reliable MOSFET for your next electronic project? Look no further than the IRFP250N Power MOSFET. This MOSFET comes with a host of benefits that make it the perfect solution for high voltage and high current applications. Pros: - High voltage capability of up to 200V - Low on-resistance (0.07 ohms), meaning it can handle high...

Place of Origin:Hunan, China

Brand Name:GCE

Model Number:RBMS07S20-125A384V

...high voltage bms What? Why? How? High voltage bms is to make many cells in 8 strings, 12strings 13strings...24strings to be a basic module, and many same battery modules in series as a battery rack and many racks in parallel as a battery stack and many stacks in parallel as a battery bank and... GCE says, we can make 8 strings of cells, 12S ,13S...23S, 24S, any of them as a basic module, you many install a mosfet...

Brand Name:Original Factory

Model Number:LMG1025QDEETQ1

Place of Origin:CN

...Low Side GaN And MOSFET Driver For High Frequency And Narrow Pulse Applications Product Description Of LMG1025QDEETQ1 The LMG1025QDEETQ1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency ...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...

Brand Name:JUYI

Model Number:JY213H

Place of Origin:China

JY213H High Voltage 3-Phase Gate Driver with three independent high and low side referenced output channels DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase ...

Brand Name:ON

Model Number:FQA40N25

Place of Origin:original

...High Power MOSFET electronic chip brand new original TO-3P MOSFET 250V N-Channel QFET Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series FQA40N25 Reference Type Series Output Type Fixed Voltage - Output (Min/Fixed) 10V Current - Output 10 mA Tolerance ±0.05% Temperature Coefficient 3ppm/°C Noise - 0.1Hz to 10Hz 50µVp-p Noise - 10Hz to 10kHz - Voltage...

Brand Name:ZMSH

Model Number:6Inch SiC Epitaxial Wafer

Place of Origin:CHINA

...High Voltage SiC Epitaxial Wafer Main Introduction 6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices This product is a high-purity, low-defect silicon carbide (SiC) epitaxial layer with a thickness ranging from 100 to 500 μm, grown on a 6-inch N-type 4H-SiC conductive substrate via high...

Brand Name:UCHI

Model Number:SGM8271/8272/8274

Place of Origin:Dongguan China

High Voltage Rail-to-RailOutput Operational Amplifiers Integrated Circuit IC The SGM8271 (single), SGM8272 (dual) and SGM8274(quad) are high voltage operational amplifiers, whichcan operate from 4.5V to 36V single supply or from±2.25V to ±18V dual power ...

Brand Name:BigFlier

Model Number:F-22S-400A-B

Place of Origin:ShenZhen

HV 22S 400A Speed Brushless Controller Motor for RC Boat Efoil Basic information: Voltage Current Size(mm) weight(g) BEC (Volts/Amps) Box Programming support Computer Programming support Firmware update 3-22S 400A 115*63*35 450g OPTO Yes Yes Yes Feature...

Brand Name:JEUNKEI

Model Number:JY213H

Place of Origin:China

...high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage...