mosfet diode transistor

Brand Name:Original

Model Number:IRLML6401TRPBF

Place of Origin:Original

...: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 4.3 A ...

Brand Name:Infineon

Model Number:IRLML6401TRPBF

Place of Origin:Shenzhen,China

12V Si MOSFET Diode Transistor Chips IRLML6401TRPBF P-Ch -4.3A 50m Ohm Product description Part number IRLML6401TRPBF is manufactured by Infineon Incorporated Company and distributed by AYE. As one of the leading distributors of electronic products, we ...

Brand Name:vishay/ours

Model Number:ss36

Place of Origin:CHINA

...SMB Surface Mounted Schottky Barrier Rectifier Diode Transistors MOSFET Bridge rectifiers electronic component Name: 3A SS32 SS33 SS34 SS35 SS36 SS39 SS310 SS315 SS320 SMA/DO-214AC package SMD Schottky barrier Rectifier Diode Model No.: SS32 SS33 SS34 SS35...

Brand Name:ST

Model Number:STTH6003CW

Place of Origin:Original

Electronic components STTH6003CW TO-247 mosfet diode new ic chip Model number STTH6003CW Package TO- 247 D/ C 19+ 18+ 17+ Type Diode/ IC chip Condition In stock Email sales07@wtxcapacitors.com More product: Payment and shipping: A. By Express-such as DHL, ...

Brand Name:Hua Xuan Yang

Model Number:4306W-A

Place of Origin:ShenZhen China

...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet...

Brand Name:Hua Xuan Yang

Model Number:4306W-A

Place of Origin:ShenZhen China

...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet...

Brand Name:onsemi

Model Number:ATP114-TL-H

Place of Origin:United States

ATP114-TL-H P-Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK Features:ATP114-TL-H Category Single FETs, MOSFETs Mfr onsemi FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 55A...

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS...

Brand Name:original

Model Number:LP2301BLT1G

Original New MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G Products Description: 1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers 2.the material of product compliance withRoHS requirements and Halogen Free 3.S- prefix for ...

Brand Name:/AMPLEON

Model Number:BLF188XR,112

Place of Origin:USA

...Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 24.4dB 1400W SOT539A Features eXtremely rugged high-power delivery up to 1400 W Excellent stability under severe mismatch conditions Compact and easy-to-manufacture due to all-planar matching structure Improved Class-C operation due to new dual-sided ESD diode...

Brand Name:Infineon

Model Number:IRF5210PBF

Place of Origin:Original Factory

...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:INFEINEON

Model Number:SAK-TC234LP-32F200N AC

Place of Origin:Original Brand

... to you, please let us know. we are pleased to quote you our best price . Thank you ! A diode transistor IC (Integrated Circuit) is a type of electronic component that combines diodes and transistors into a single package. Diodes are electronic components

Model Number:BAS316Z

..., Switching High-speed switching diodes This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for ...

Brand Name:Infineon

Model Number:IRFP90N20DPBF

Place of Origin:Original

Mosfet Power Transistor IRFP90N20DPBF 200V 94A 23mOhm 180nCAC MOSFET Transistor Applications • High frequency DC-DC converters • Lead-Free Description The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide ...

Brand Name:Original Factory

Model Number:MSCSM120HM31CTBL2NG

Place of Origin:CN

...Mosfet Array Transistors Product Description Of MSCSM120HM31CTBL2NG MSCSM120HM31CTBL2NG device is a full bridge 1200 V/79 A silicon carbide (SiC) MOSFET power module. Specification Of MSCSM120HM31CTBL2NG Part Number MSCSM120HM31CTBL2NG Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V Power - Max 310W Operating Temperature -55°C ~ 175°C (TJ) Features Of MSCSM120HM31CTBL2NG SiC Schottky Diode

Brand Name:Infineon Technologies

Model Number:SPW24N60C3

Place of Origin:original

...MOSFET Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD): 150W - RDS(ON): 0.077Ω - Maximum Junction Temperature (Tj): 150°C - Transistor...

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44N

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 ...

Model Number:MBR30100CT

Place of Origin:United States

Brand Name:Original

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Brand Name:Anterwell

Model Number:IRF2907ZS-7PPBF

Place of Origin:original factory

IRF2907ZS-7PPbF HEXFET® Power MOSFET Features • Advanced Process Technology • Ultra Low On-Resistance • 175°C Operating Temperature • Fast Switching • Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for high current, high ...

Brand Name:NXP

Model Number:BUK201-50Y

Place of Origin:Malaysia

BUK201-50Y NPN PNP Transistors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a Nominal load current (ISO) 5 pin plastic envelope, configured as a single high...