mos transistor as a switch

Country/Region:china

...transistors is very large. It is a solid semiconductor device with multiple functions such as detection, rectification, amplification, switching, voltage regulation, and signal modulation.Pingshang Technology´s main SMD transistor series, the main categories are: SMD diodes, SMD transistors, field effect transistors and MOS transistors.Free samples, provided for life!The transistor...

Brand Name:Hua Xuan Yang

Place of Origin:ShenZhen China

Model Number:HXY4266

60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power MOSFET Applications Load Switch for Portable Devices z DC/DC Converter Maximum ratings (at TA=25℃ unless...

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Anterwell

Model Number:2SK3561

Place of Origin:original factory

N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward ...

Brand Name:TOSHIBA

Model Number:TK13A60D

Place of Origin:Original

... Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS ...

Model Number:FDS6699S

Place of Origin:America

Brand Name:Fairchild

... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) ...

Brand Name:SILAN

Model Number:SVF840F

Place of Origin:CHINA

...MOS tube Description: SVF840F/D/S/MJ N-channel enhancement mode high voltage power MOS field effect transistor It is manufactured using Silan Microelectronics' F-Cell TM planar high voltage VDMOS process technology. advanced The technology and cell structure make the product have lower on-resistance and superior switching...

Brand Name:NXP

Model Number:BSH201

Place of Origin:CHINA

...Fast switching • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This

Brand Name:INFINEON

Model Number:IPD036N04L

Place of Origin:Germany

Brand Name:Original Factory

Model Number:TW015N120C,S1F

Place of Origin:CN

Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V​ Product Description Of TW015N120C,S1F TW015N120C,S1F is Silicon Carbide N-Channel MOS Transistors, suitable for use in Switching Voltage Regulators. Specification Of ...

Brand Name:Julun

Model Number:PG-TO 252-3

Place of Origin:CHINA

...Transistor Field Effect MOS Tube Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Excellent thermal behavior • Integrated ESD protection diode • Low switching losses (Eoss) • Product validation acc. JEDEC Standard Benefits • Cost competitive technology • Lower temperature • High ESD ruggedness • Enables efficiency gains at higher switching...

Brand Name:Alpha Omega Semiconductor Inc

Model Number:AO3402

... gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. Basic data ​1. product model:AO3402 2. Product features:Switching power supply protection 3. wrap:SOT23-3 4. FET type: Single N-Channel MOS 5

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement...

Brand Name:GINRI

Model Number:JR-16J/24Z

Place of Origin:CHINA

...Transistor Module 24V NPN / PNP Input Signal For Servo System Transistor amplifying plate is non-contact, DC 24V controlled by 5-24V, transistor amplifying plate is divided into large current and small current type, large current MOS tube, small current Darlington tube, hydraulic solenoid valve Coil, electromagnetic switch...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...: Introducing the High Voltage MOSFET, a MOS-Gate Transistor specifically designed for ultra-high voltage applications. This particular device is ideal for Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, and Electrical Power...

Place of Origin:Japan

Brand Name:RENESAS

Model Number:2SK2939-90STL

Silicon N Channel MOS FET 2SK2939-90STL RENESAS TO-263 New and Original Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source ​ Part No 2SK2939-90STL Manufacturer RENESAS Package TO-263 ...

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

...Transistor D2PAK Electric Cigarette Machine Parts A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. CMOS CMOS (complementary MOS...

Model Number:NP110N055PUG

Place of Origin:US

Brand Name:Original

MOSFET N-CH 55V 110A TO-263 NP110N055PUG Product Description Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive ...

Brand Name:STMicroelectronics

Model Number:L4973D3.3-013TR

... voltage up to 50V. Realized in BCD mixed technology, the device uses an internal power D-MOS transistor (with a typical RDS(on) of 0.15Ω) to obtain very high efficiency and very fast switching times. Switching frequency up to 300KHz are achievable (the

Brand Name:OEM

Model Number:0005

Place of Origin:CHINA

...0mm can be offered for TO-220, TO-247, TO-264, TO-3P sizes, customized size is available, ROHS is compliant. IC, MOS, transistor, schottky, IGBT, high density switch power supply, HF communications equipment and brazing machine. Test Item Unit 96% Aluminum