irg4ibc30s transistor bipolar igbt

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:

Categories:Diodes Transistors

Country/Region:china

MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ...

Brand Name:Original Factory

Model Number:FF450R12ME4

Place of Origin:CN

Transistors FF450R12ME4 IGBT Module Trench Field Stop Half Bridge Inverter Product Description Of FF450R12ME4 FF450R12ME4 is 1200 V, 450 A dual IGBT Module with TRENCHSTOP™ IGBT4, Emitter Controlled HE diode and NTC. Also available with Thermal Interface...

Brand Name:Anterwell

Model Number:2SB649A

Place of Origin:original factory

2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL ...

Place of Origin:Japan

Brand Name:FUJI

Model Number:FHX13LG 218-0738003 Computer GPU CHIP AMD IC

Super Low Noise HEMT FUJI FHX13LG Discrete Transistors Bipolar RF Amplifier 218-0738003 Computer GPU CHIP AMD IC We have new and original parts below: FHX13LG Discrete Transistors Bipolar RF Amplifier ic chips New and Original IC Electronic Parts ...

Brand Name:original

Model Number:BCX56

Place of Origin:Original Factory

... BIPOLAR TRANSISTOR CUSTOMIZAION INTEGRATED CIRCUITS ORIGINAL Warranty: Global 180 Days Return Shipment: DHL,TNT,Fedex Customiazaion: Accepted Oem: Welcome High Light: BCX56 Bipolar Transistor , Customizaion Bipolar Transistor BCX56 Bipolar Transistor ...

Brand Name:ROHM Semiconductor

Model Number:2SB1424

Place of Origin:JAPAN

...UTC ICS 2SB1424 Bipolar Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration...

Place of Origin:US

Brand Name:Original

Model Number:FGH40N60SMD

Product Detail Packaging Tube Part Status Active IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A Power - Max 349W ...

Brand Name:Infineon Technologies

Model Number:SPW35N60C3

Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ...

Model Number:MMBT3906

Place of Origin:Guangdong, China

Brand Name:KAIGENG

MMBT3906 SOT-23 Electronic Components The transistor Engine Spot FET VN-Channel New Original MMBT3906 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;...

Place of Origin:original

Brand Name:original

Model Number:2SA1037AKT146Q

#detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px...

Categories:Transistors - IGBTs - Single

Country/Region:china

... to the data sheet, such as PDF files Docx documents, etc. We have IRG4IBC30S high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Brand Name:KRUNTER

Model Number:KWP75H12E4-7M

Place of Origin:CHINA

... Gate Bipolar Transistor Assembly (IGBT), an Isolated Gate Thyristor Module, and an Insulated Gate Bipolar Transistor Element in a single package. This high-performance module is designed to provide efficient power switching capabilities in a wide range of

Brand Name:Bourns

Model Number:BIDW30N60T

...technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a

Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Brand Name:ST

Model Number:STGW80H65DFB

Place of Origin:Original

... Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: ...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Model Number:PIMN31

Place of Origin:Malaysia

...IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT...

Brand Name:Lingxun

Model Number:LGT40N65HB

Place of Origin:China

Practical 60KHz Inverter IGBT , Multi Function Gate Bipolar Transistor Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible power ...

Brand Name:General Electric

Model Number:DS200IIBDG1AEA

Place of Origin:United States

... a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you