infineon hexfet power mosfet

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Power MOSFET is a cutting-edge semiconductor device designed to meet the demanding requirements of modern electronic applications. As a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), this product boasts exceptional performance characteristics that make it an ideal choice for high power and high efficiency systems. With its low on resistance and robust power handling capabilities, the High Power MOSFET

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

Place of Origin:CHINA

IRLR3915TRPBF Infineon Technologies/International Rectifier IOR HEXFET MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing...

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well

Brand Name:INFINEON

Model Number:IRF3205PBF

Place of Origin:Germany

...Hexfet Power Mosfet 10A 55V 200W Field - effect tube inverter high - power Mosfet tube Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs...

Brand Name:Infineon Technologies

Model Number:IRF7476TRPBF

Place of Origin:Multi-origin

...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5

Model Number:IRLL024NTRPBF

Place of Origin:original factory

... HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well

Place of Origin:PHILIPPINE

Brand Name:International Rectifier

Model Number:IRF7342Q

...HEXFET Power MOSFET Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET...

Place of Origin:USA

Brand Name:IR (International Rectifier)

Model Number:IRLML6346TRPBF

...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description: HEXFET Power MOSFET Quantity Available: 7073 Pieces Unit Price: Email us: sales009@eis-limited.com D/C

Place of Origin:USA

Brand Name:IR (International Rectifier)

Model Number:IRLML6346TRPBF

...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description: HEXFET Power MOSFET Quantity Available: 7073 Pieces Unit Price: Email us: sales009@eis-limited.com D/C

Brand Name:Infineon

Model Number:IRFP4368PbF

Place of Origin:CHINA

...Infineon Trans MOSFET N-CH Si 75V 350A 3-Pin(3+Tab) TO-247AC Tube Product Technical Specifications EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active SVHC Yes SVHC Exceeds Threshold Yes Automotive No PPAP No Product Category Power MOSFET Material Si Configuration Single Process Technology HEXFET...

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:Original Factory

Model Number:AUIRF8739L2TR

Place of Origin:CN

...MOSFET AUIRF8739L2TR 40V Automotive Single N-Channel HEXFET Power MOSFET Description AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power...

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:INFINEON

Model Number:BSC220N20NSFD

INFINEON Chip BSC220N20NSFD MOSFET N-CH 200V 52A TSON-8 Manufacturer: Infineon Product Category: MOSFET Packaging: Reel Brand: Infineon Technologies Product Type: MOSFET Subcategory: MOSFETs Company introduction: Hong Kong Interra Technology Co., Ltd. is ...

Brand Name:STMicroelectronics

Model Number:IPB017N10N5

Product Range IPB017N10N5 Infineon Field Effect Transistor Semiconductors Power Mosfet Transistors MOSFET N-channel 600 V, 0.175 Ohm typ 18 A MDmesh DM2 Power MOSFET in D2PAK package App Characteristics Ideal for hot-swap and e-fuse applications Very low...

Brand Name:Infineon Technologies

Model Number:SPA04N80C3

Place of Origin:China

Infineon MOSFET N-Ch 800V 4A TO220FP-3 CoolMOS C3, Replacement for CoolMOS™ C3 is CoolMOS™ P7 800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™ quality CoolMOS™ technology has been manufactured by Infineon

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Place of Origin:US

Brand Name:Original

Model Number:SPP20N60C3

Product Detail Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) Drive ...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power