improved system efficiency low power mosfets

Brand Name:Lingxun

Place of Origin:China

...Low Power Mosfets Electronic Devices Improved System Efficiency Product Description: Our Low Voltage MOSFET boasts of a low on-resistance, which is essential in minimizing power losses and improving system efficiency. With this feature, this product can handle high currents with minimal power dissipation, making it ideal for power management, motor control, and other high-power applications. Another advantage of our Low Voltage MOSFET

Brand Name:Infineon Technologies

Model Number:IRFS7437TRLPBF

Place of Origin:original

...making it ideal for high-efficiency power switching applications. It is designed with a maximum drain source voltage of 500V and a drain current of 4A, making it suitable for a wide range of ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... in modern electronics. With its cutting-edge trench and SGT (Super Gate Trench) structural processes, this product stands out in the field of power management and electronic switching applications. At the heart of the Low Voltage MOSFET's exceptional

Brand Name:PANJIT

Model Number:ER1004FCT

Place of Origin:Original

...Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • Super fast recovery times, high voltage. • Pb ...

Brand Name:Infineon

Model Number:IRFI4019HG-117P

Place of Origin:China

...Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low...

Brand Name:ST

Model Number:STPS15L30C-TR STS1DNC45 STV6419AG

Place of Origin:Original

...mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves

Brand Name:FAIRCHILD

Model Number:SSS7N60B

Place of Origin:Original

...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient...

Brand Name:JUYI

Model Number:JY09M TO 252

Place of Origin:China

... the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ●

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient...

Place of Origin:PHILIPPINE

Brand Name:International Rectifier

Model Number:IRF7342Q

...Power MOSFET Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved...

Brand Name:Original Factory

Model Number:SCT040HU65G3AG

Place of Origin:CN

...Power MOSFET SCT040HU65G3AG SIC Integrated Circuit Chip HU3PAK IC Chip​ Product Description Of SCT040HU65G3AG SCT040HU65G3AG improve application performance in frequency, energy efficiency, system size and weight reduction. Specification Of SCT040HU65G3AG Part Number: SCT040HU65G3AG Drain-Source Voltage: 650V Drain Current (Continuous) At TC = 100 °C: 30A Drain Current (Pulsed): 160A Total Power...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

Place of Origin:CHINA

...MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved...

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:STW48N60DM2

...low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency

Brand Name:YUYANG

Model Number:YYZJ03

Place of Origin:China

...Low Power Consumption Safety And Efficiency Heating Equipment Introduction: 1. Adopting European MOSFET, IGBT solid-state power module and advanced resonant inverter technology, with high efficiency and high output power, saving energy; 2. High frequency, heated quickly, its power...

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

... gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details please click here. Features ● 40V/80A, RDS(ON) ≤6.5mΩ

Brand Name:HAIJIANG

Model Number:HJF1000

Place of Origin:China

...low noise, quick response, high-efficiency, Shorter Cycle Time, Improve Production efficiency home appliance injection molding machine is the type of fully-automatic machine, being provided with high efficiency, high reliability, high speed, low noise, low power...

Brand Name:RESUN

Model Number:R-12K-TL

Place of Origin:China

...efficiency low loss IP65 • Adopting advanced technology to significantly improve the efficiency of energy conversion and release more available electricity. ​ • Optimize circuit design, reduce operating energy consumption, and save energy more economically. ​ • Specially designed for three-phase power systems to meet the electricity needs of high-power...

Model Number:ESP32-2432S032N

Place of Origin:china

... ESP32 module has a dual core processor that can handle multiple tasks simultaneously, improving system efficiency. 2. WiFi and Bluetooth connectivity: The ESP32 module supports WiFi and Bluetooth connectivity, making it easy to connect to networks and