igbt power transistor 20a

Brand Name:Infineon

Model Number:IKW20N60T

Place of Origin:Original Factory

IKW20N60T IGBT Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features Lowest VCEsat drop...

Brand Name:Fairchild/ON

Model Number:FGH60N60SMD

Place of Origin:CN

... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,

Brand Name:onsemi

Model Number:NGTB40N120SWG

...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors...

Brand Name:IXYS

Model Number:IXYK110N120A4

... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The

Brand Name:NCE

Model Number:NCE20TD60B

Place of Origin:CHINA

Place of Origin:MALAYSIA

Brand Name:Standard Brand

Model Number:6MBP20RH060

...IGBT-IPM(600V/20A) Mega Source Elec. Limited promises: Only 100% New and Original parts Lowest Price & Quickly Delivery Buy more can enjoy a super cheap price Excellent after service and good quality We also purchase the excess and surplus stocks inventory of below products: IC/Connectors/Semiconductors/Logic/Resistors/Rdram/Potentionmeter/Memory/Capacitors/Eeprom/Dram/Sdram/Vram/Sram/Modules/Diodes/Switches/Transistors...

Place of Origin:US

Brand Name:Original

Model Number:IHW20N120R3FKSA1

... - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A Power - Max 310W Switching Energy 950µJ (off) Input Type Standard Gate Charge 211nC Td (on

Brand Name:FAIRCHILD

Model Number:FSBB20CH60C

Place of Origin:USA

...-CB package) • Very low thermal resistance due to using DBC • Easy PCB layout due to built in bootstrap diode • 600V-20A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Divided negative dc-link terminals for

Place of Origin:CN

Brand Name:Original Factory

Model Number:FB20R06W1E3

Automotive IGBT Modules FB20R06W1E3 IGBT Module 600V 20A Power Integrated Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date ...

Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Brand Name:Infineon Technologies

Model Number:IRG4PC40UDPBF

Place of Origin:original

... IGBT Power Module High Quality High Efficiency Low Loss Operation IRG4PC40UDPBF IGBT Power Module The IRG4PC40UDPBF IGBT power module from Infineon is a high voltage (HV) insulated gate bipolar transistor (IGBT) module. It is designed for high power ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:OTOMO

... switching power supply 20A 200V Schottky Barrier Diode HBR20200 TO-220C TO-220HF TO-263 APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications FEATURES Common cathode structure Low power loss, ...

Brand Name:Fanuc

Model Number:1MBI400NA-120

Place of Origin:Japan

New Module 1MBI400NA-120 FUJI Module Original IGBT Power Module Part Category: Transistors Manufacturer: Fuji Electric Corp. of America Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channe fuji a50l-0001-0327, a50l-0001-0327 ...

Brand Name:KRUNTER

Model Number:KWG600H12N4B

Place of Origin:CHINA

...functionality of an Isolated Gate Thyristor Module (IGT) and an Insulated Gate Transistor Block (IGT) into a single integrated device. This innovative module offers unparalleled performance and efficiency in a wide range of power electronics applications.

Brand Name:ABB

Model Number:3BSC610067R1 SD834

Place of Origin:China

... V or d.c. 110-150 V. Output d.c. 24 V 20A. If redundant power application is required connect to SS8XX voting unit. DIN rail mounted. G2 compliant. Additional Information Medium Description: Input a.c. 100-240 V or d.c. 110-150 V. Output d.c. 24 V 20A. If

Brand Name:Hua Xuan Yang

Model Number:AP2302AGN-HF

Place of Origin:China

Specialized Hot ICs AP2302AGN-HF APEC AP2302AGN-HF Description AP2302A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer wit...

Brand Name:Uchi

Model Number:Cooling plate 80

Place of Origin:Dongguan，Guangdong,China

...IGBT Water-cooling Plate, Aluminum High-performance Liquid Cooling Plate, 800mm Copper Cooling Plate This high-performance liquid cold plate is made from aluminum and copper, ensuring efficient cooling for IGBT systems. With customizable sizes and surface treatments like anodizing and sandblasting, it caters to diverse industrial applications such as LED lighting, inverters, and power...