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All igbt bipolar transistor wholesalers & igbt bipolar transistor manufacturers come from members. We doesn't provide igbt bipolar transistor products or service, please contact them directly and verify their companies info carefully.
| Total 95 products from igbt bipolar transistor Manufactures & Suppliers |
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Brand Name:ST Model Number:STGW80H65DFB Place of Origin:Original ... Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: ... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN ... excellent combination of low conduction losses, high switching frequency, high reliability, and high current density. High Power IGBT has a current density of 400A/cm2 and an application frequency of 60KHz. It also has a number of advantages, such as its |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:ON Model Number:MMBT5551LT1G Place of Origin:ON ... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Brand Name:ON/Fairchild Model Number:G40N60UFD Place of Origin:Original Factory G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:KRUNTER Model Number:KWG600H12N4B Place of Origin:CHINA ...speed switching capability of a power transistor with the efficiency of a MOSFET. This module features an Insulated Gate Bipolar Transistor (IGBT) element, which allows for efficient power control and management in a wide range of applications. Designed to |
Krunter Future Tech (Dongguan) Co., Ltd.
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Brand Name:General Electric Model Number:DS200IIBDG1AEA Place of Origin:United States ... a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you |
Joyoung International Trading Co.,Ltd
Fujian |
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Brand Name:Texas Instruments Model Number:TCAN1042GDQ1 PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage... |
Guangzhou Topfast Technology Co., Ltd.
Guangdong |
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Brand Name:INFINEON/IR Model Number:IRGB10B60KDPBF Place of Origin:Germany IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT 600V 22A 156W TO220AB Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:IXYS Model Number:IXYK110N120A4 ... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The |
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Place of Origin:Japan Brand Name:FUJITSU Model Number:2DI30M-050 ...BIPOLAR TRANSISTOR MODULES Rating and Specifications . Part NO: 2DI30M-050 Brand: FUJITSU Mounting Type: Screws Date Code: 04+ Quality Warranty: 3 Months Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT... |
Mega Source Elec.Limited
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Brand Name:TOSHIBA Model Number:GT20J301 Place of Origin:JAPAN GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:Anterwell Model Number:GP4068D Place of Origin:original factory IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C ... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:Lite-On Inc. Model Number:LTV-356T-D Place of Origin:original LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output current: 1.... |
Shenzhen Sai Collie Technology Co., Ltd.
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Place of Origin:Original Brand Name:Microsemi Corporation Model Number:APT50GT60BRDQ2G APT50GT60BRDQ2G IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Model Number:TIP41C Place of Origin:China Brand Name:original ...transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin(3+Tab) TO-220AB Tube 4.The TIP41C is a base island technology NPN power transistor... |
Shenzhen Res Electronics Limited
Guangdong |
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Brand Name:Microchip / Microsemi Model Number:JAN2N2222A Place of Origin:ORIGINAL JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:Original Model Number:2N3792 Place of Origin:Original ...Bipolar Transistors BJT Power BJT Trans GP BJT PNP 80V 10A 5000mW 3-Pin(2+Tab) TO-3 Tray Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-3 Product Type: BJTs - Bipolar Transistors Factory Pack Quantity: 1 Subcategory: Transistors... |
Walton Electronics Co., Ltd.
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Brand Name:Original Factory Model Number:FS75R12KE3BPSA1 Place of Origin:CN Automotive IGBT Modules FS75R12KE3BPSA1 IGBT Modules Transistors Chassis Mount Product Description Of FS75R12KE3BPSA1 FS75R12KE3BPSA1 provide substrate with low thermal resistance, compact design, PressFIT contact technology, and rugged mounting due to ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Texas Instruments Model Number:TCAN1042GDQ1 Place of Origin:N/S IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ... |
Yingxinyuan Int'l(Group) Ltd.
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Brand Name:Fairchild/ON Model Number:FGH60N60SMD Place of Origin:CN ... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology, |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |