hy1906 fet inverter transistor

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz ...

Brand Name:Original Factory

Model Number:IMZ120R140M1H

Place of Origin:CN

... is TO-247-4, Through Hole. Specification Of IMZ120R140M1H Part Number IMZ120R140M1H FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ ...

Brand Name:AOS

Model Number:AO4441

Place of Origin:original

AO4441 MOSFET Power Electronics FETs MOSFETs Transistors P-Channel 60V 4A Surface Mount Package 8-SOIC FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low On Resistance High Power MOSFET Stable Process Reliable Quality *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {...

Brand Name:TOSHIBA

Model Number:TLP250

Place of Origin:Original

...TRANSISTOR INVERTER INVERTERS tv circuit boards led driver circuit board Transistor Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality,cheap quality, original, if interested,pls contact us to get quote. Our company can supply all IRF Series,BT134-600E IRF3205 IRF540 IRF630 IRF640 IRFP250 IRF4905 IRF730 IRF740 IRFZ44 BT136S-600 ...

Brand Name:Diodes

Model Number:DMT6009LSS-13

Place of Origin:CHINA

...Transistors FETS MOSFET N-CH 60V 10.8A 8SO T&R 2 Discrete Semiconductor DMT6009LSS-13 Specification : Part number DMT6009LSS-13 Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series - Package Tape & Reel (TR) Part Status Active FET...

Brand Name:HUAYI

Model Number:HY1906B

Place of Origin:CHINA

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Brand Name:Onsemi

Model Number:FDV303N

Place of Origin:USA

FDV303N Digital FET N-Channel Onsemi RF Transistors Manufacturer: onsemi Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source...

Place of Origin:Original

NTZD3154NT1G Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 540mA Rds On (Max) @ Id, Vgs 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name:ON

Model Number:NTTFS3A08PZTAG

Place of Origin:America

NTTFS3A08PZTAG Transistors FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

... Hole TO-220AB Specification: Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)

Brand Name:VISHAY

Model Number:SUD50P06-15L-E3

Place of Origin:Original Manufacturer

...-E3 TO252 TRENCH FET SERIES Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated...

Brand Name:Infineon Technologies

Model Number:IRFP4568PBF

Place of Origin:Original

IRFP4568PBF Mosfet Power Transistor 150V 171 5.9mOhm N-Channel Mos Solar Power Inverter Applications SMPS UPS Solar power inverter DC motor drives Battery powered applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ...

Place of Origin:Taiwan

Brand Name:Motorola, Inc

Model Number:MRF136

Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ...

Brand Name:NEXPERIA

Model Number:NX7002AK

Place of Origin:CHINA

NX7002AK NEXPERIA N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted D Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active SVHC Yes Automotive No PPAP No Product Category ...

Brand Name:SolarverTech

Model Number:NM1K

Place of Origin:Jiaxing / zhejiang /china

...inverter 1000 Watt Modified Sine Wave Inverter How about the modified sine wave inverter ? Modified sine wave switching inverter power supply uses PWM pulse width modulation to generate modified wave output. During the inverter process, due to the use of special intelligent circuits and high-power FETs...

Brand Name:Hua Xuan Yang

Model Number:1606 D-U-V

Place of Origin:ShenZhen China

Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management Mos Field Effect Transistor Description The Mos Field Effect Transistor is a type of MOSFET. The operating principle of power MOSFET is similar to the general MOSFET. The power ...