high read speed 330mb s emmc memory ic

Place of Origin:Guangdong, China

Brand Name:PG

Model Number:G25064GTLCA

eMMC IC FLASH 64GBIT EMMC 153FBGA FLASH NAND Memory IC 128GB 64Gb 32GB 16GB 8G X 8 eMMC5.1 153 WFBGA 11.5x13x0.8 WHY CHOOSE US? 1.Strong research and development strength 2. Our factory has advanced packaging and testing technology 3. Complete storage ...

Brand Name:Original Factory

Model Number:IS21TF08G-JCLI

Place of Origin:CN

...pSLC Mode NAND. Specification Of IS21TF08G-JCLI Part Number: IS21TF08G-JCLI Memory Organization: 8G X 8 Sequential Write: 135 MB/s Technology: FLASH - NAND (TLC) Sequential Read: 320 MB/s Supplier Device Package: 153-VFBGA (11.5x13) Package Outline Of​

Brand Name:Micron

Model Number:MTFC4GLWDM-4M AAT

Place of Origin:Original

2.7V-3.6V eMMc 4GB 70MB/s read speed 7.5MB/s write speed memory chip MTFC4GLWDM-4M MTFC4GLWDM-4M AAT Z, MTFC4GLWDM-4M AAT A Features • MultiMediaCard (MMC) controller and NAND Flash •Packages (RoHS compliant, "green package") – 153-ball TFBGA • VCC: 2.7–3....

Brand Name:PG

Model Number:G25128TLIA

Place of Origin:China

Product Description: The EMMC Memory Card is a versatile storage solution that offers high performance and reliability for a wide range of electronic devices. Equipped with advanced Error Correction Code technology, this EMMC Memory Chip ensures data ...

Brand Name:original

Model Number:IDT7024L20GB

Place of Origin:original

IDT7024L20GB Original SRAM 4KX16 DUAL PORT Tray Memory Data Storage Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location ◆ High-speed access – Commercial: 15/17/20/25/35/55ns (max.) – Industrial: 20ns (max.) –...

Brand Name:Macronix

Model Number:MX25V2035FZUI

Place of Origin:Multi-origin

Product Listing: MX25V2035FZUI Flash Memory Chip Features: 2.0V Power Supply Voltage 3V/3.3V I/O Voltage 32Mbit (4M x 8bit) Capacity Serial Peripheral Interface (SPI) Standard SPI Mode Dual Output Fast Read (DOFR) Mode Quad Output Fast Read (QOFR) Mode ...

Place of Origin:PHILIPPINE

Brand Name:Micron Technology

Model Number:MT4LC4M16R6TG-5

Quick Detail: DRAM Description: The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits...

Brand Name:Renesas Electronics America Inc

Model Number:71V546S100PFG

Product Details DESCRIPTION: The IDT71V509 is a 3.3V high-speed 1,024,576-bit synchronous SRAM organized as 128K x 8. It is designed to eliminate dead cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given...

Brand Name:SST

Model Number:SST25VF064C-80-4I-Q2AE-T

Place of Origin:Taiwan

Programmer IC Internal Circuit SST25VF064C-80-4I-Q2AE-T 64 Mbit SPI Serial SST25VF064C-80-4I-Q2AE-T 64 Mbit SPI Serial Dual I/O Flash FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – SPI Compatible: Mode 0 a...

Brand Name:Micron

Model Number:MT41K256M16TW-107 IT:P

Place of Origin:USA

...IC chips IC DRAM 4GBIT PARALLEL Integrated circuit Flash memory EEPROM DDR EMMC MT41K256M16TW-107 I MT41K256M16TW-107 IT:P DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read...

Categories:Memory ICs

Country/Region:china

Product Details: "M95512-WMN6TP" Introducing the M95512-WMN6TP - a high-performance, serial EEPROM (Electrically Erasable Programmable Read-Only Memory) designed to provide non-volatile storage solutions for a wide range of applications. This exceptional ...

Brand Name:ALLIANCE

Model Number:AS4C1M16F5-60JC

Place of Origin:Malaysia

... DQ • Fast page mode • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three

Brand Name:MDTIC

Model Number:MT41J128M16HA-15E-D

Place of Origin:Original

Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Features • VDD = VDDQ = +1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • ...

Categories:Integrated Circuit IC Chip

Country/Region:china

MT25QU128ABA1EW9-0SIT Products Description: The MT25Q is a high-performance multiple input/output serial Flash memory device. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms...

Brand Name:IHANG

Model Number:IH58

Place of Origin:China

...Memory eMMC 8G/18GB and Support Max64GB SD card Display 4.0inch 480*800 high resolution, full axis viewing IPS LCD With Industrial touch panel Key pad 23 physical Keyboards IC card reader EMV/PBOC2.0 L1&L2; ISO 7816 with 2 SAM CARD slot Expansion Slot Mini SD Card Slot USB 1 USB (OTG),1 USB(RS232) Printer High Speed, High