high power pnp transistor

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:2SA1015

SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURE Ÿ Power dissipation MARKING A1015=Device code Solid dot=Green molding compound device, if none,the normal device Y=Rank of hFE, ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:2N5401

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity ...

Brand Name:Anterwell

Model Number:MJD112T4G

Place of Origin:original factory

... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available •

Brand Name:STMICROELECTRONICS

Model Number:BD442

Place of Origin:Original

...PNP power transistor high power mosfet transistors Features ■ PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high...

Place of Origin:US

Brand Name:Original

Model Number:MJL21195G MJL21196G

... Transistor Type PNP Current - Collector (Ic) (Max) 16A Voltage - Collector Emitter Breakdown (Max) 250V Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 8A, 5V Power - Max...

Brand Name:InterFET

Model Number:J201

Place of Origin:USA

...Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate-Source Cutoff Voltage: - 1.5 V Drain-Source Current at Vgs=0: 80 mA Pd - Power...

Brand Name:original

Model Number:CLA50E1200HB

Place of Origin:Original Factory

...HIGH POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...High Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and a faster switching speed, High Power IGBT offers a reliable and efficient solution for these applications. High Power...

Brand Name:Analog Devices Inc.

Model Number:AD9361BBCZ

Place of Origin:Multi-origin

...Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications. Features: • High power capability: Pout = 10 W • High

Model Number:FDPC5018SG

Place of Origin:America

Brand Name:ON

FDPC5018SG Electronic part MOS transformer Bom service Original high power mosfet transistor #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate ...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Model Number:SGT75T65SDM1P7

Place of Origin:original

Brand Name:original

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Model Number:BT136-600D

Place of Origin:United States

Brand Name:Original

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Brand Name:ON

Model Number:FDA59N30

Place of Origin:Original

... stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

Brand Name:ECHIP

Model Number:TIP42C

Place of Origin:CHINA

...PNP Transistors Bipolar (BJT) Transistor PNP 100V 6A 65W Features ■ Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching Description The TIP41C is a base island technology NPN power transistor in TO-252 plastic package that make this device suitable for audio, power...

Place of Origin:/

Brand Name:MHCHXM

Model Number:MBR40100PT

...Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage,

Place of Origin:China

Brand Name:ONSEMI

Model Number:NUS5530MN

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has

Brand Name:Texas Instruments

Model Number:TPS62141RGTR

Place of Origin:N/S

...PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light Load Efficiency, Output Discharge, Power...