high power dual p channel mosfet

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDH3632

High Power MOSFET FDH3632 N-Channel PowerTrench^® MOSFET 100V, 80A, 9mΩ High Power MOSFET FDH3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and ...

Brand Name:onsemi

Model Number:FDMC86261P

Place of Origin:original

Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities 150V FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2....

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:8205A

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power...

Brand Name:Anterwell

Model Number:IRF7311TRPBF

Place of Origin:original factory

...Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Model Number:IRF7311TRPBF

Place of Origin:original factory

...Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: High Voltage MOSFET is a type of power mosfet, which is designed for high voltage applications. It is characterized by its embedded FRD high voltage MOSFET technology, ultra-high voltage MOSFET application, low leakage and variable ...

Place of Origin:China

Brand Name:Topsung

Model Number:t589

...high power dual band VHF UHF radio transceiver 589 V:136-174MHz / U: 400-470MHz • Dual band, dual display, dual standby • HI/MI/LO power selective, max.: 10W • 2500mAh high capacity li-ion battery • FM radio(87-108MHz) • Torch light function • DTMF encode/ decode • CTCSS / DCS • Stun and kill function • 2 tone encode / decode • Call function, 1750Hz tone burst • Emergency alarm, mandown alarm • Wide/Narrow band • 2 × 128 memory channels...

Categories:Amplifier Board Module

Country/Region:china

The TPA3255 is a high-performance Class D power amplifier from Texas Instruments (TI), delivering both Class D efficiency and true high-end audio quality. It incorporates an advanced integrated feedback design and proprietary high-speed gate driver error ...

Place of Origin:Guangdong, China

Brand Name:Original

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Brand Name:JUYI

Model Number:JY2605M

Place of Origin:China

...density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ● 60V/50A, RDS(ON)

Brand Name:original

Model Number:SI6926DQ

Place of Origin:Original Manufacturer

...DUAL N-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET Detailed Product Description High Light: power led driver circuit , offline led driver ic Quick Detail: Dual N-Channel 2.5V Specified PowerTrench MOSFET Description: This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power...

Place of Origin:PHILIPPINE

Brand Name:Fairchild Semiconductor

Model Number:SI6926DQ

Quick Detail: Dual N-Channel 2.5V Specified PowerTrench MOSFET Description: This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications...

Brand Name:ON Semiconductor

Model Number:NCS20074DTBR2G

... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to 18V) make it ideal for high-frequency switching applications. Applications: DC-DC Converters, Motor Drives,

Brand Name:Original

Model Number:IPG20N06S4L14AATMA1

Place of Origin:Original

...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low ...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

...Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE  High power...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

...Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Infineon Technologies AG—a global leader in semiconductor solutions for power management and industrial applications. As a key component in high...

Brand Name:Original Factory

Model Number:A4989SLDTR-T

Place of Origin:CN

... translator suitable for driving a wide range of higher power industrial bipolar 2-phase stepper motors (typically 30 to 500 W). Motor power is provided by external N-channel power MOSFETs at supply voltages from 12 to 50 V. A4989SLDTR-T contains two