high power 100v n channel mosfet

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDM3622

High Power MOSFET FDM3622 N-Channel PowerTrench^® MOSFET 100V, 4.4A, 60mΩ High Power MOSFET FDM3622 N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and ...

Brand Name:Infineon Technologies

Model Number:IRFP4468PBF

Place of Origin:Multi-origin

...resistance of 0.024Ω. 4. Low gate charge of 25nC. 5. High speed switching of over 30V/ns. 6. Ease of paralleling. 7. Low thermal resistance. 8. Lead-free (RoHS compliant). Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to

Brand Name:ZETEX

Model Number:ZXMN10A09KTC

Place of Origin:Original

100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power...

Brand Name:Hua Xuan Yang

Model Number:G120P06LR1D

Place of Origin:ShenZhen China

...Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities. Many power MOSFETs...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: High Voltage MOSFET is a type of power mosfet, which is designed for high voltage applications. It is characterized by its embedded FRD high voltage MOSFET technology, ultra-high voltage MOSFET application, low leakage and variable ...

Brand Name:ON

Model Number:FDMC86139P

Place of Origin:ON

...Technology: Si Mounting Style: SMD/SMT Package / Case: Power-33-8 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 4.4 A Rds On - Drain-Source Resistance: 67 ...

Brand Name:Infineon

Model Number:IRF9540NPBF

Place of Origin:Original Factory

...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in

Brand Name:IOR

Model Number:IRF540NS

Place of Origin:CHINA

... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast ...

Brand Name:JUYI

Model Number:JY11M

Place of Origin:China

...Channel Enhancement Mode Power MOSFET GENERAL DESCRIPTION The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ● 100V...

Brand Name:ON Semiconductor

Model Number:BSS123LT1G

Place of Origin:China

BSS123LT1G N-Channel MOSFET Low 170mandOmega; RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection andnbsp; Features andbull;HBM ...

Brand Name:Original Factory

Model Number:IPD35N10S3L26ATMA1

Place of Origin:CN

... charge for smaller driver output stage. Specification Of IPD35N10S3L26ATMA1 Part Number: IPD35N10S3L26ATMA1 Mounting Style: SMD/SMT Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 20 mOhms Qg -

Brand Name:Infineon Technologies

Model Number:BSC109N10NS3G

Place of Origin:Original

BSC109N10NS3G npn power transistors 109N10NS n-channel mosfet 100V 63A TDSON-8 OptiMOS Features · Very low gate charge for high frequency applications ·Optimized for dc-dc conversionN-channel, normal level ·Excellent gate charge x RDs(on)product (FOM) ·...

Brand Name:BigFlier

Model Number:F-22S-400A-B

Place of Origin:ShenZhen

RC Hobby Mosfet Waterproof High Power ESC 22S 400A With 12 Months Warranty Basic information: Voltage Current Size(mm) weight(g) BEC (Volts/Amps) Box Programming support Computer Programming support Firmware update 3-22S 400A 120*64*38mm 700g OPTO Yes Yes ...

Brand Name:INFINEON

Model Number:IPD082N10N3

Place of Origin:original

...channel MOSFET transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load switch Used as a switch for converters and regulators Conclusion: High voltage capability: Vds=100V Low conduction resistance: Rds (on)=8.2m Ω (typ.) Fast switching speed: td (on)=16ns (typ.), td (off)=60ns (typ.) High...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID...

Brand Name:Original brand

Model Number:IRF640NSTRLPBF

Place of Origin:Original Manufacturer

...CHANNEL MOSFET TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

...Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Infineon Technologies AG—a global leader in semiconductor solutions for power management and industrial applications. As a key component in high...

Brand Name:Toshiba

Model Number:TK100E10N1,S1X(S

Place of Origin:JAPAN

Product Description: Toshiba TK100E10N1,S1X(S Power IC Chip, which is a 650V, 30A MOSFET N, is an excellent choice for applications that require excellent performance even in extreme conditions. With its operating temperature range of -55℃ ~ +150℃ and ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power...

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in