high performance rf power transistors

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:VBE

Model Number:VBE6006H

Place of Origin:CHINA

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Place of Origin:CN

Brand Name:Original Factory

Model Number:QM56032

QM56032 Wireless Communication Module High Performance RF Power Amplifier [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Brand Name:Silicon Labs

Model Number:SI4010-C2-GSR

Place of Origin:Multi-origin

...RF Power Transistors Product Description: The SI4010-C2-GSR is a high-performance RF power transistor specifically designed for use in narrow band, high power applications such as cellular, PCS, and 3G infrastructure. The device is manufactured using a special GaN on SiC process that provides high efficiency, high power...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF5177

...RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Applications: Performance @400MHz,28Vdc-Power Output=30W(Min) Gain=6.0dB(Min) Isothermal Design for Rugged Performance...

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

Model Number:YP40601625T

...Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies 4000 to 6000MHz, in particular 5700- 5900MHz. The performance is guaranteed for applications operating in the mentioned frequencies There is no guarantee of performance...

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

...Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS • Charging stations for electric vehicles • LED lighting • Telecom • Servers • Solar inverters BENEFITS • Extremely high effi ciency performance

Brand Name:ST

Model Number:TIP122

Place of Origin:Original Factory

...Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance...

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:SWT

Place of Origin:China

840-960 MHz Jammer Module High-Performance RF Interference Device Amplifier Module for Anti-Drone Systems Product Overview The 840-960 MHz Jammer Module is a high-performance RF interference device designed to block wireless communication signals within a ...

Model Number:FCX690BTA

... pulse current of up to 6A, along with a low saturation voltage for efficient operation. This device is AEC-Q101 qualified, ensuring high reliability.Product Attributes Brand: Diodes Incorporated Product Line: Diodes Incorporated Material: Molded plastic (

Brand Name:Anritsu

Model Number:MG3692A

Place of Origin:Japan

... from 10 MHz to 20 GHz in a single instrument. This instrument offers all the capabilities of a high-end microwave generator at the highest performance level, leveraging the technology-leading phase noise performance of its predecessor, the 69C series. The

Brand Name:Texin

Place of Origin:Guang Dong China

High Performance Broadband Power Amplifier Module Product Overview The Broadband Power Amplifier is a high-performance PA power amplifier module designed to deliver exceptional amplification across a wide frequency spectrum. Engineered for versatility and reliability, this broadband power...

Brand Name:ELT(Elite)

Model Number:SMP-K506-68

Place of Origin:China

.... It features a small form factor and lightweight design, along with exceptional seismic performance and a broad operating bandwidth. The SMP operates within a frequency range of up to 30GHz (our high-performance SMP connectors can extend up to 40GHz).

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:Charter Leader

Model Number:CLP-2-8-4Way PD

Place of Origin:China

... Range 2～8GHz Amplitude Balance ≤±5° VSWR ≤1.45:1 Phase Balance ≤±0.5dB Insertion Loss ≤1.2dB(not Include Theory 6dB) Power Handling 10W/2W Isolation ≥18dB Temperature Range -40℃～+70℃

Brand Name:Infineon

Model Number:IKW25N120T2

Place of Origin:Original Factory

IKW25N120T2,1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package Insulated Gate Bipolar Transistor IKW25N120T2 K25T1202 1200V 25A Igbt Transistors Description 1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package Infineon ...

Brand Name:Taconic

Model Number:TRF-45

Place of Origin:China

...Power of TRF-45 for High-Performance RF Designs In the ever-evolving world of high-frequency electronics, the choice of PCB material can make all the difference in the performance and reliability of your designs. One material that has been gaining traction among RF...

Brand Name:ZD

Model Number:zd-dl-2n

Place of Origin:china

...RFA signal loss ranges from 1dB to 20dB, it has excellent electrical and mechanical performance Application of RF Signal Attenuator : Mobile Communication Network Optimization and Indoor distribution system. Cluster Communication, Satellite Communication,