high eas capability low vth mosfet

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: The Low Voltage MOSFET is a cutting-edge semiconductor device designed for applications requiring high efficiency and reliability. As a fundamental component in modern electronic systems, MOSFETs (Metal-Oxide-Semiconductor Field-Effect...

Brand Name:Lingxun

Place of Origin:China

Model Number:LG120N10AT

Energy Storage Low Voltage MOSFET Practical N Channel High EAS Capability *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: ...

Brand Name:Vishay Siliconix

Model Number:SIHG22N60E-GE3

Place of Origin:Mult-origin

Product Listing: SIHG22N60E-GE3 MOSFET Features: - 600V N-Channel MOSFET - Highest efficiency and superior switching performance - Low input capacitance and gate charge - Low gate-source threshold voltage - 100% avalanche tested - RoHS compliant Electrical...

Brand Name:original

Model Number:PBSS4160T,215

Place of Origin:Original Manufacturer

...LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability...

Brand Name:Huixin

Model Number:BC3400

Place of Origin:China

... current capability Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V ...

Brand Name:PANJIT

Model Number:ER1004FCT

Place of Origin:Original

...Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • Super fast recovery times, high voltage. • Pb free product are

Brand Name:Anterwell

Model Number:MIC4426BN

Place of Origin:original factory

...low power consumption and high efficiency. These drivers translate TTL or CMOS input logic levels to output voltage levels that swing within 25mV of the positive supply or ground. Comparable bipolar devices are capable of swinging only to within 1V of the

Model Number:PBSS4160T,215

Place of Origin:CN

PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:WSF6012

...MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF6012 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low...

Brand Name:Microchip

Model Number:Onsemi

...MOSFET with a maximum drain current of 11A and a low on-state resistance of 0.109 ohms. Specification: Maximum Voltage Rating: 900V Maximum Drain Current: 11A On-State Resistance: 0.109 ohms Gate Threshold Voltage: 4V (typical) Features: High voltage capability Low...

Brand Name:ON Semiconductor

Model Number:MMDF3N04HDR2

Place of Origin:Shenzhen, China

... high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Brand Name:onsemi

Model Number:KSD1408YTU

Place of Origin:China

...MOSFET 100A Current 3.8mΩ Low Rds(on) Fast Switching High Efficiency 150°C Rating Ultra-Low Gate Charge Superior dv/dt Ruggedness Halogen-Free & RoHS Compliant Features 1:Ultra-Low On-Resistance (3.8mΩ): Minimizes conduction losses for higher system efficiency and reduced heat generation 2:High Current Capability...

Brand Name:UCHI

Model Number:SGM48211

Place of Origin:Dongguan China

...High FrequencyHigh-side And Low-side Driver Integrated Circuit IC Chip The SGM48211 is a half-bridge MOSFET driver with4A peak source and sink output current capability,which makes it possible to drive large power MOSFETswith minimized switching losses. The two channels ofhigh-side and low...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability...

Brand Name:Original Factory

Model Number:LMG1025QDEETQ1

Place of Origin:CN

...Low Side GaN And MOSFET Driver For High Frequency And Narrow Pulse Applications Product Description Of LMG1025QDEETQ1 The LMG1025QDEETQ1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability...

Brand Name:INFINEON

Model Number:IPD082N10N3

Place of Origin:original

...MOSFET transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load switch Used as a switch for converters and regulators Conclusion: High voltage capability: Vds=100V Low conduction resistance: Rds (on)=8.2m Ω (typ.) Fast switching speed: td (on)=16ns (typ.), td (off)=60ns (typ.) High...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

...MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE  High power and current handing capability...

Brand Name:original

Model Number:LSI1012LT1G

Place of Origin:China

...Transistor Mosfet DiodesSOT-23(SOT-23-3) LSI1012LT1G Products Description: 1. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 2. High-Side Switching Low On-...

Brand Name:Original

Model Number:DMP2035U-7

Place of Origin:Original

...-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Product Attribute Attribute Value Product Category: MOSFET RoHS: Details

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability...