high collector current epitaxial planar transistor

Brand Name:Huixin

Model Number:S8550 SOT-89

Place of Origin:China

...Epitaxial Planar Transistor S8550 SOT-89 0.5A SMD Transistor PNP Silicon Epitaxial Planar Transistor S8550 SOT-89 Datasheet.pdf FEATURES For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector...

Brand Name:UCHI

Model Number:SS8050W

Place of Origin:Dongguan China

...-323 ELECTRICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V

Brand Name:Anterwell

Model Number:HJ44H11

Place of Origin:original factory

...TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „DESCRIPTION The UTC HJ44H11 is designed for such applications as: series, shunt and switching regulators; output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; low and high frequency inverters/converters; and many others. ABSOLUTE MAXIMUM RATINGS (TA=25℃) PARAMETER SYMBOL RATINGS UNIT Collector- Emitter Voltage VCEO 80 V Collector...

Brand Name:SANKEN

Model Number:2SB1560

Place of Origin:Philippines

...Epitaxial Planar Transistor , 2SB1560 audio power mosfet DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2390 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector...

Brand Name:Sanken

Model Number:2SC3264

Place of Origin:JAPAN

...Epitaxial Planar Transistor (Complement to type 2SA1295) MT200 TRANS NPN 230V 17A 60MHz 200W Sanken Japan Original Application : Audio and General Purpose Features: DETAIL descrtiption others Type Separate semiconductor products Transistors - Bipolar Transistors (BJTs) - Single maker Sanken Series - Packing State of parts new original Type NPN VCE saturation voltage drop (maximum) with different IB and IC 2V @ 500mA,5A Current

Brand Name:Sanyo

Model Number:2SC2078

Place of Origin:Shenzhen, China

...Epitaxial Planar Silicon Transistor Specifications : Absolute Maximum Ratings at Ta = 25˚C Parameters Symbols Ratings Collector-to-Base Voltage VCBO 80V Collector-to-Emitter Voltage VCER 75V Emitter-to-Base Voltage VEBO 5V Collector Current IC 3V Collector Current (Pulse) ICP 5A Collector...

Brand Name:Original

Model Number:MMBT5401

...Epitaxial Silicon Transistor MMBT5401 2L SOT-23 3000 pcs BJT PNP Transistor MMBT5401PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage -150Volts Power 300mWatts MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: 2L FEATURES *PNP epitaxial silicon, planar design. *Collector-emitter voltage VCE=-150V. *Collector current...

Brand Name:XUYANG

Model Number:1SS83

Place of Origin:China

...Epitaxial Planar For High Voltage Switching Diode 1SS83 Features • High Reverse Voltage(VR = 250V) • High reliability with glass seal . Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Absolute Maximum Ratings Parameter Symbol Limit Unit Reverse Voltage VR 250 V Peak Reverse Voltage*1 VRM 300 V Average rectified current Io 200 mA Peak forward current IFM 625 mA Non-Repetitive peak forward surge current...

Brand Name:ROHM Semiconductor

Model Number:1SS26(C3)

Place of Origin:CHINA

1SS226 Switching Diodes Silicon Epitaxial Planar for Ultra-High-Speed Switching 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified Feature High-speed switching Internal Connection Series Number of Circuits 2 AEC-Q101 Qualified...

Brand Name:Nexperia

Model Number:BCX54-10-QX

Place of Origin:China

... medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits andbull; High collector current capability IC and ICM andbull; Three current gain selections andbull; High power dissipation ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:TIP117

...Transistors TIP117 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain Low Collector-Emitter Saturation Voltage Complementary to TIP112 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector...

Brand Name:ST

Model Number:TIP122

Place of Origin:Original Factory

...Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features Designed for General purpose linear and switching applications. Low collector

Brand Name:original

Model Number:2N2219

Place of Origin:original

...18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. Product Category:

Model Number:2N2907A

...Transistors Collector- Emitter Voltage 60 V Descriptions of Aviation Parts: The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. Features of Aviation Parts: High current...

Place of Origin:US

Brand Name:Original

Model Number:2SD669A

High power NPN epitaxial planar transistor 2SD669A Product Description Yonlanda Skype: qyt-yolanda1 Email: yonlandasong(at)quanyuantong.net

Brand Name:ST

Model Number:BUF420AW

Place of Origin:Malaysia

...LOT SPREAD FOR RELIABLE OPERATION ●LOW BASE-DRIVE REQUIREMENTS Description: The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with

Place of Origin:/

Model Number:BC818-40

...Transistors BC818-40 SOT-23 New and Original For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807, BC808 (PNP) ​ Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 25V Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:A42

...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector...

Brand Name:onsemi

Model Number:BCP56-16T1G

Place of Origin:China

... is housed in the SOT−223 package, which is designed for medium power surface mount applications. PRODUCT PROPERTIES Product Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1 A Voltage - Collector Emitter Breakdown (Max) 80 V

Model Number:PBSS4160T,215

Place of Origin:CN

...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor...