hauni max through hole transistor

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

... are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. Material Most transistors are made from very pure silicon, and some

Place of Origin:US

Brand Name:Original

Model Number:2SA2210

... @ 350mA, 7A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1A, 2V Power - Max 2W Frequency - Transition 140MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3

Brand Name:Original Factory

Model Number:AFGHL30T65RQDN

Place of Origin:CN

...Hole Transistors Product Description Of AFGHL30T65RQDN AFGHL30T65RQDN is IGBT transistors 650V/30A FS4 SCR IGBT T0247-3L Automotive. Specification Of AFGHL30T65RQDN Part Number: AFGHL30T65RQDN Test Condition: 400V, 40A, 6Ohm, 15V Mounting Type: Through Hole Vce(On) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Current - Collector (Ic) (Max...

Brand Name:Toshiba

Model Number:2SC4793

Place of Origin:JAPAN

...Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SA1837 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications Product Attribute Attribute Value Mounting Style: Through Hole Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max...

Brand Name:Toshiba

Model Number:2SC5200-O(Q)

Place of Origin:JP

... / Case: TO-3P-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 230 V Collector- Base Voltage VCBO: 230 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 400 ...

Brand Name: USA Inc.

Model Number:PH2369

Place of Origin:CHINA

...Transistor NPN 15V 200mA 500MHz 500mW Through Hole TO-92-3 DESCRIPTION NPN switching transistor in a TO-92 FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching. Product Attributes Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA Current - Collector Cutoff (Max...

Brand Name:original

Model Number:2N3439

Place of Origin:original

...Bipolar Transistors Through Hole TO-39-3 Manufacturer: original Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-39-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 350...

Place of Origin:Original

SLA5064 Specifications Part Status Active FET Type 3 N and 3 P-Channel (3-Phase Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A Rds On (Max) @ Id, Vgs 140 mOhm @ 5A, 4V Vgs(th) (Max) @ Id...

Brand Name:ST

Model Number:STGW80H65DFB

Place of Origin:Original

...Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max...

Brand Name:IXYS

Model Number:IXYX110N120B4

...Si Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Maximum Gate Emitter Voltage: - 30 V, + 30 V Continuous Collector Current at 25 C: 340 A Pd - Power Dissipation: ...

Brand Name:Infineon Technologies

Model Number:IRFB7434PBF

Place of Origin:United States

IRFB7434PBF N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-220AB Features: Category Single FETs, MOSFETs Mfr Infineon Technologies Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - ...

Brand Name:Anterwell

Model Number:IRFP9240PBF

Place of Origin:original factory

IRFP9240, SiHFP9240 Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available PRODUCT SUMMARY VDS...

Brand Name:To shi ba

Model Number:TK15A20D,S4X(S

Place of Origin:Shenzhen, China

...Transistor DC-OUT 4-Pin PDIP SMD T/R Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Max Processing Temp 260 Maximum Continuous Drain Current 15 A Maximum Drain Source Voltage 200 V Maximum Gate Source Voltage ±20 V Mounting Through Hole...

Categories:Discrete Semiconductors

Country/Region:china

...TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) 　 APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET N-CH 650V 94A T-MAX

Brand Name:DELI

Model Number:YC164-JR-0722RL

Place of Origin:United states

...~1.2w Temperature Coefficient: 250ppm Operating Temperature: -55℃~200℃ Color: blue Varistor Voltage: 470(423~517) Max Allowable Voltage AC: 300 Max Allowable Voltage DC: 385 Clamping Voltage: 775 Max.

Brand Name:onsemi

Model Number:FDMS86500DC

Place of Origin:Multi-origin

Product Listing: FQB34P10TM – N-Channel MOSFET Power Electronics Parameters: • VDSS: 30V • ID: 34A • RDS(on): 0.065Ω • Package: TO-220 • Type: N-Channel MOSFET • Application: Power Electronics • Gate Charge (Qg) (Max): 22nC • Qg @ 10V (Max): 16.2nC • VGS(...

Brand Name:Infineon / IR

Model Number:IKW30N60H3

Place of Origin:Germany

...Transistors IKW30N60H3 K30H603 silk screen new imported triode IGBT high power welding tube IGBT Transistors 600V 30A 187W Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: IGBT Transistors RoHS: Details Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max...

Brand Name:HENGXIANG OPTICAL ENCODER

Model Number:S38

Place of Origin:Shanghai

...hole 30mm thickness 28mm Product Information Protection grade: IP50 & IP65 Solid Shaft diameter: 6mm (D shape) Shaft length:13mm Consumption current: 100mA MAX Load Voltage: ≤DC30V Top REV: 5000RPM ;IP65≤3000r rpm Environmental temperature:Operating:-20 ～+90°；storage:-25 ～+100° Principle of encoder A logic gate interprets certain input voltages as high (logic 1) or low (logic 0). TTL (transistor

Brand Name:Original

Model Number:BU508AW

Place of Origin:Original

... Circuits PRODUCT PROPERTIES Manufacturer: STMicroelectronics Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 700 V

Brand Name:IXYS

Model Number:IXGH24N170

...Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products 　 Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1700 V Current - Collector (Ic) (Max) 50 A Current