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All gan si epi wafer wholesalers & gan si epi wafer manufacturers come from members. We doesn't provide gan si epi wafer products or service, please contact them directly and verify their companies info carefully.
| Total 22 products from gan si epi wafer Manufactures & Suppliers |
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Brand Name:ZMSH Model Number:6/8/12INCH GaN-ON-silicon Place of Origin:CHINA ...GaN) has been widely used in power devices and blue light-emitting diodes due to its wide energy gap. Introduction There is a growing need for energy ... |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Brand Name:HMT Model Number:4 inch Place of Origin:China ... on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers: 5G-related RF devices, such as power amplifier High-efficiency power electronics devices, such as power supplies, DC/DC ... |
Homray Material Technology
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Brand Name:zmkj Model Number:8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer Place of Origin:CHINA ...GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED for RF application GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer... |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Brand Name:PAM-XIAMEN Place of Origin:China ...ch is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates of |
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian |
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Brand Name:ZG Model Number:MS Place of Origin:CHINA GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our ... |
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
Henan |
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Place of Origin:CN Brand Name:Original Factory Model Number:MAMG-100227-010C0L MAMG-100227-010C0L GaN IC Hybrid GaN Module GaN-On-Si Hybrid Power Amplifier Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:BonTek Model Number:Sapphire (Al2O3) Place of Origin:China 8 Inch Dia 200mm Sapphire Wafer By 1.0mm Thickness 1sp For Epi - Ready Carrier Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and chemical properties. The hardest of the oxide crystals, sapphire Al2O3 retains... |
Hangzhou Freqcontrol Electronic Technology Ltd.
Shanghai |
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Brand Name:JOPTEC Place of Origin:HEFEI, CHINA With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices... |
JOPTEC LASER CO., LTD
Anhui |
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Brand Name:HT Model Number:HT-BGW Place of Origin:China ... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and |
Zhengzhou Hongtuo Superabrasive Products Co., Ltd.
Henan |
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Brand Name:ANG Model Number:ANG-SOI 01 Place of Origin:Guangdong, China ...Wafer Silicon on Insulator Semiconductor Wafer SOI Wafer (Silicon On Insulator) * SOI Wafer sizes from 3" to 200mm, some in inventory * Very high quality with tight TTV on device layer thickness * Direct Si-Si bonding and double sided SOI available * Any Si orientation, any device thickness over 1.5um * Single and double side polished * Small lot sizes and Laser marking of wafers available * Short lead time delivery TYPES OF SOI WAFER |
Shenzhen A.N.G Technology Co., Ltd
Guangdong |
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Brand Name:Silian Model Number:Customized Place of Origin:China Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate production. Heat Exchanger Method (HEM) - ... |
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
Chongqing |
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Brand Name:SIGNI Model Number:SS Place of Origin:CN ..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high performance. ... |
SIGNI INDUSTRIAL (SHANGHAI) CO., LTD
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Brand Name:ZHENAN Model Number:Polycrystalline Silicon Wafer Place of Origin:China ...Si Materials 99.999% Silicon Lump Granule for PVD Coating Polycrystalline Silicon Wafer Specifications Item Theoretical Value Purity 6N-7N, etc. Form Wafer Diameter 6-inch, 8-inch, 12-inch Thickness 200±20μm Melting Point 1410℃ Boiling Point 2355℃ Resistivity 0.5~2Ω·cm Packing & Delivery Our Polycrystalline Silicon Wafer... |
Zhenan Metallurgy Co., Ltd
Henan |
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Brand Name:Mingrui Model Number:XF-1012 Place of Origin:Guangdong, China(mainland) ...Wafer Boat for Diffusion of 8" Wafer Processing 25 wafer boat Key words : Semiconductor Wafer Boat Features: 8" wafer boat is made of ultra-high purity quartz (4N purity) with 1200oC working temperature Can carry 25 piece wafers of 8" diameter in each boat Design for diffusion, oxidation and annealing 4" Si wafer... |
Dongguan Ming Rui Ceramic Technology Co.,ltd
Guangdong |
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Place of Origin:China ...GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN... |
Chongqing Newsin Technology Co., Ltd
Chongqing |
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Brand Name:Crystro Model Number:CR210330-4 Place of Origin:China ... as a substrate for the growth of other carnet crystals. Crystro manufactures gadolinium gallium garnet in forms such as single crystals, ingots, boules, wafers in both standard and custom dimensions. We offer both polished (single or double sided) and |
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
Anhui |
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Brand Name:KEYENCE Model Number:SI-F series Place of Origin:Japan SI-F series Keyence Micro-head Spectral-interference Laser Displacement Meter Product Description: Introducing the world’s first micro-head, with the highest measurement accuracy in its class and a level of performance that was previously thought impossible. These micro-head sensors can be used to measure the thickness and warpage of high-precision objects such as silicon wafers... |
Xiamen ZhiCheng Automation Technology Co., Ltd
Guangdong |
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Place of Origin:Changge,China Brand Name:Huanghe Whirlwind Model Number:Silicon 0.35 Product Description Product Parameter Company Information Workshop Certificate Exhibition FAQ 1: Are you trading company or manufacturer? We have been the world's leading manufacturer of superabrasives, superhard composites and superhard cutting tools. 2: ... |
Henan Huanghe Whirlwind International Co.,Ltd.
Henan |
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Brand Name:CAEC Place of Origin:Henan, China ..., corrosion resistance, wear resistance, long service life, high precision and good etching uniformity of wafer epitaxy layer. Application ICP etching process of epitaxial film materials(GaN, SiO 2, etc.) for LED wafer chips, precision ceramic parts for |
China Abrasives Industry Hainan Corporation
Hainan |
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Model Number:Customized Place of Origin:China Brand Name:Sanhui ...Wafer for sale Test report of 99.95%(min) purity molybdenum wafer (MO≥ 99.95%) Si<0.002 K S Al<0.0006 Na C Fe<0.004 Ca<0.0015 O < 0.008 Cu Pb<0.0003 N < 0.002 Mg<0.0007 Bi<0.0003 Ni<0.002 Sn<0.0002 Mn Sb<0.0005 P<0.001 Cd<0.0003 Technical parameters of 99.95%(min) purity molybdenum wafer: 99.95%(min) purity molybdenum wafer... |
Zhengzhou Sanhui Refractory Metal Co., Ltd.
Henan |