gan on gan sic substrate

Brand Name:zmkj

Model Number:4inch--semi high purity

Place of Origin:china

...sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​ Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate

Brand Name:zmkj

Model Number:2-4inch template

Place of Origin:CHINA

...Sic substrates AlN Wafer Characteristic III-Nitride(GaN,AlN,InN) 2inch AlN template on sapphire or sic substrates, HVPE Gallium Nitride wafer,AlN substrates on GaN We offer single crystalline AlN substrates on c-plane sapphire template,which called AlN wafer or AlN template,for UV LEDs, semiconductor devices and AlGaN epitaxial growth.Our epi-ready, C-plane AlN substrates

Brand Name:HMT

Model Number:4 INCH

Place of Origin:China

GaN-on-SiC epi wafer supplier for RF application customized Homray Material Technology provide high quality GaN-on-SiC epitaxial wafer for RF application. We supply 4inch and 6 inch GaN on SiC epi wafer with semi-insulating SiC substrate. SiN passivation ...

Brand Name:PAM-XIAMEN

Place of Origin:China

...SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN...

Brand Name:ANG

Model Number:SIC-W05

Place of Origin:Guangdong, China

... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it

Place of Origin:CN

Brand Name:Original Factory

Model Number:MAPC-A3005

MAPC-A3005 GaN IC GaN On SiC Transistor GaN FETs Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer ...

Brand Name:CSIMC

Model Number:ZnO wafer

Place of Origin:China

...substrate is used in GaN(blue LED) epitaxial substrate wide band connection devices and other fields Zinc oxide (ZnO) crystal substrate is widely used in GaN(blue LED) epitaxial substrate, wide band connected devices and other fields. Zinc oxide single crystal is a good substrate material for GaN...

Place of Origin:China

Brand Name:CRYLINK

Model Number:CRYLINK-ScAlMgO4 Crystal

...GaN and ZnO heteroepitaxy recently developed with the ideal substrate material, currently it match the GaN and ZnO best in the new substrate materials.ScAlMgO4 crystals are hexagonal system,which lattice constant a = 0.3246 nm, c = 2.5195 nm, with rhombohedron layered structure, similar to wurtzite nitrides and the structure of zinc oxide.ScAlMgO4 crystal is a kind of ideal substrate

Brand Name:Silian

Model Number:Customized

Place of Origin:Chongqing，China

..., mainly because it has been unable to find a substrate that matches the lattice constant of GaN, resulting in the density of defects in the epitaxial crystal. Too high, until 1991, Nichia Co. researcher S. Nakamura used low-temperature growth of an

Brand Name:JOPTEC

Place of Origin:HEFEI, CHINA

With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices...

Brand Name:Qorvo

Model Number:QPA2933

... output power and 28dB of large-signal gain while achieving 62% power-added efficiency. The QPA2933 is fabricated on a 0.25µm QGaN25 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and can support a variety of operating conditions to

Brand Name:ACASOM

Model Number:ACA-ISO-JAM2420S1

Place of Origin:Shenzhen

... is 1-2km. This product use the latest generation of power devices-gallium nitride(GAN), which uses a ceramic package and a copper gold-plated substrate process. This product also uses circulators and isolators, which greatly provides product stability.

Place of Origin:China

2 inch Free-Standing GaN Substrates Dimensions:Ф 50.8 mm ± 1 mm Thickness:350 ± 25 µm Useable Surface Area:> 90% Orientation:C-plane (0001) off angle toward M-Axis 0.35°± 0.15° Orientation Flat:(1-100) ± 0.5°, 16.0 ± 1.0 mm Secondary Orientation Flat:(11-...

Brand Name:HT

Model Number:HT-BGW

Place of Origin:China

HT-BGW Glass Grinding Wheel For Gallium Arsenide GaN Wafer High Efficiency Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can offer an excellent selection of back grinding wheels. This particular grinding ...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

... applications . With an ideal crystal structure , ZnO wafer ( Zinc oxide ) has a 2% lattice mismatch to GaN , that is much less than the lattice mismatch of sapphire wafer and SiC wafer . ZnO wafer is one of the most suitable substrate for using as GaN

Brand Name:Analog Devices Inc.

Model Number:HMC442LC3BTR

Place of Origin:Multi-origin

... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency ...

Categories:RF Transistors

Country/Region:china

QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds...