fets mosfets with high power handling

Brand Name:Infineon Technologies

Model Number:IRFP7530PBF

Place of Origin:original

... threshold voltage of 4V. It has a maximum drain current of 61A and a maximum drain source resistance of 0.0084 Ohms. It offers a maximum power dissipation of 225W and a maximum junction temperature of 175°C

Place of Origin:China

Brand Name:ONSEMI

Model Number:SSN1N45B

High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:ON

Model Number:NDP6060L

Place of Origin:original

NDP6060L Chipscomponent Electronic Components IC Chips NDP6060L High Power MOSFET electronic chip brand new original TO-220(TO-220-3) MOSFET N-Ch LL FET Enhancement Mode Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series NDP6060L Reference ...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ...

Brand Name:Original

Model Number:IRFP064

...Powerful MOSFET for High Power Applications Pros and Cons of the IRFP064 MOSFET Are you seeking a powerful and reliable MOSFET for your high power applications? The IRFP064 is an excellent choice! This MOSFET boasts a drain-source voltage of 55V, a continuous drain current of 110A, and low on-resistance for efficient operation. Pros: - High power handling...

Brand Name:CANYI

Model Number:SI2301

Place of Origin:Guangdong, China

...MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features: Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.2 A Pulsed Drain Current 1) IDM -8 Maximum Power

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Brand Name:Infineon Technologies

Model Number:IPP65R110CFDA

Place of Origin:United States

IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3 Features:IPP65R110CFDA Category Single FETs, MOSFETs Mfr Infineon Technologies Series Automotive, AEC-Q101, CoolMOS Product Status Active FET Type N-Channel Technology MOSFET (...

Brand Name:FAIRCHILD

Model Number:FDP085N10A

Place of Origin:America

... Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id...

Brand Name:JH Stock

Place of Origin:Shenzhen

...High Power MOS Module 5 ~ 40 Volt Description of Hot Bed Special MOS Tube Extension : 3D printer hot bed high-power expansion MOS module. Very powerful MOSFET to withstand higher current than normal RAMPS or other 3D Printer controller can handle. Solves the problem of current load and too much heat bed power...

Place of Origin:Japan

Brand Name:SUMITOMO

Model Number:FLL177ME 216-0774191 Computer GPU CHIP AMD IC

quick details: Place of Origin: Taiwan Brand Name: ATI Model Number: 216-0774191 Type: N/A Application: N/A Supply Voltage: V Dissipation Power: W Operating Temperature: °C Package: BGA Date code: 2011+ ROHS origin: United States Lead-free products: YES ...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

Product Introduction of Infineon IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Original Factory

Model Number:IPD068N10N3GATMA1

Place of Origin:CN

...Power MOSFET Surface Mount Type 100V 90A Product Description Of IPD068N10N3GATMA1 IPD068N10N3GATMA1 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Product Attributes Of IPD068N10N3GATMA1 Part Number IPD068N10N3GATMA1 FET Type N-Channel Technology MOSFET...

Model Number:UF3C065080T3S

...SiC JFET with a Si MOSFET in a cascode configuration, offering standard gate-drive characteristics for easy integration as a drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Key advantages include ultra-low gate charge,

Brand Name:STMicroelectronics

Model Number:STP55NF06FP

Place of Origin:China

...Power MOSFET with andlt;0.02andOmega; RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control andnbsp; Features 1:Low On-Resistance (Low RDS(on)): Extremely low maximum on-resistance of 0.02andOmega; (at Vgs=10V), reducing conduction losses, improving efficiency, and minimizing heat generation. 2:High Current Handling: Capable of handling...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality, if interested,pls contact us to get quote. Our company can supply all IRF Series, hot sale and in stock, wholesale will get good quote. Packaging Tube Part Status Active FET Type N-Channel ...

Model Number:FDS6699S

Place of Origin:America

Brand Name:Fairchild

... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30.0 V Current Rating 21.0 A ...