fets mosfets with high power efficiency

Brand Name:onsemi

Model Number:NTMFS5C460NLT1G

Place of Origin:original

NTMFS5C460NLT1G MOSFET Power Electronics 8-PowerTDFN High Power Efficiency Low On Resistance Switch Mode Supplies FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 78A (Tc) Drive ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:SSN1N45B

High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:ON

Model Number:NDP6060L

Place of Origin:original

NDP6060L Chipscomponent Electronic Components IC Chips NDP6060L High Power MOSFET electronic chip brand new original TO-220(TO-220-3) MOSFET N-Ch LL FET Enhancement Mode Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series NDP6060L Reference ...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ...

Brand Name:Original

Model Number:IRFP064

...Powerful MOSFET for High Power Applications Pros and Cons of the IRFP064 MOSFET Are you seeking a powerful and reliable MOSFET for your high power applications? The IRFP064 is an excellent choice! This MOSFET boasts a drain-source voltage of 55V, a continuous drain current of 110A, and low on-resistance for efficient operation. Pros: - High power...

Brand Name:Toshiba

Model Number:TK100E08N1,S1X

Place of Origin:JAPAN

... a maximum voltage rating of 650V and a maximum current rating of 30A in a TO-247 package. It is ideal for applications requiring low on-resistance, high efficiency and high-speed switching. It is designed for industrial, automotive,

Brand Name:CANYI

Model Number:SI2301

Place of Origin:Guangdong, China

...MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features: Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.2 A Pulsed Drain Current 1) IDM -8 Maximum Power

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MGF0906B

...  High output power P1dB=37.0dBm(TYP.) @f=2.3GHz  High power gain GLP=11.0dB(TYP.) @f=2.3GHz  High power added efficiency P.A.E =40%(TYP.) @f=2.3GHz,P1dB  Hermetically sealed metal-ceramic package with ceramic lid Specifications: part no

Place of Origin:CN

Brand Name:Original Factory

Model Number:NV6046C

NV6046C GaN IC eMode GaN FET IC 650V GaNFast™ Power FET IC DPAK-2L High-performance 650V enhancement-mode GaN FET IC with GaNFast™ technology in DPAK-2L package, designed for efficient power conversion applications. Company Advantages 15+ years of ...

Brand Name:Infineon

Model Number:IRFI4019HG-117P

Place of Origin:China

...Power MOSFET 100V Ultra-Low Rds(on) 1.9mandOmega; TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications andnbsp; Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency...

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id...

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

...Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power...

Brand Name:ZETEX

Model Number:ZXMN10A09KTC

Place of Origin:Original

...MOSFET IN DPAK SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power...

Brand Name:JUYI

Model Number:JY4P7M

Place of Origin:China

... device. It achieves a high cell density and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low ...

Brand Name:GY

Model Number:GYS-40AB

Place of Origin:China

...High Power Induction Heater Heating Machine Our Induction Heating Machine adopts the most advanced technology MOS-FET,IGBT frequency conversion control to ensure high efficiency and maximum out-put power. Call us for money-saving,apply for heating,...

Brand Name:juyi

Model Number:JY8N5M

Place of Origin:China

General Description: The product utilizes the advanced planar processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...

Brand Name:Infineon Technologies

Model Number:SPW47N60C3

Place of Origin:China

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy...

Brand Name: Yuxing

Place of Origin:china

Product Description: Our Ceramic Substrates are engineered to meet the highest standards of quality and performance, making them an ideal choice for a wide range of industrial applications. As essential components in electronic and electrical devices...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

...MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Infineon Technologies AG—a global leader in semiconductor solutions for power management and industrial applications. As a key component in high-efficiency