fets mosfets with 200p rating

Place of Origin:Original

...200P,127 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4570pF @ 25V Vgs (Max) ±20V FET...

Model Number:BLF8G24L-200P,112

... refer to the data sheet, such as PDF files Docx documents, etc. We have BLF8G24L-200P,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to ...

Model Number:BLF8G24L-200P,112

RF Mosfet 28 V 1.74 A 2.3GHz ~ 2.4GHz 17.2dB 60W SOT539A

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 1.74 A 2.3GHz ~ 2.4GHz 17.2dB 60W SOT539B

Model Number:BLF8G24LS-200P,118

RF Mosfet 28 V 1.74 A 2.3GHz ~ 2.4GHz 17.2dB 60W SOT539B

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet

Brand Name:Infineon Technologies

Model Number:IRLML5103TRPBF

Place of Origin:original

...MOSFET Power Electronics High Performance Low Voltage Single N Channel Logic Level Gate FET IRLML5103TRPBF MOSFET N-Channel 20V 4.2A (Tc) 25W (Tc) Surface Mount PowerPAK 1212-8 Product Description: This IRLML5103TRPBF MOSFET is an N-channel enhancement mode power field-effect transistor in a PowerPAK 1212-8 package. It has a drain-source voltage rating of 20V, a gate-source voltage rating of ±20V, and a drain current rating...

Brand Name:FUJI

Model Number:2SK2648

Place of Origin:Original

...FET switching power mosfet > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings ( T C=25°C), unless otherwise specified Item Symbol Rating...

Brand Name:IOR

Model Number:IRFP260NPBF

Place of Origin:CHINA

...MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free FET Type N-Channel Technology MOSFET...

Brand Name:Ti

Model Number:CSD17575Q3

... × 3.3 mm Plastic Package 2 Applications Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems Optimized for Synchronous FET Applications 3 Description This 1.9 mΩ, 30 V, SON 3×3

Brand Name:CANYI

Model Number:SI2301

Place of Origin:Guangdong, China

SI2301 MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features: Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings and Thermal Characteristics (TA = 25℃...

Place of Origin:CN

Brand Name:Original Factory

Model Number:EVAL-XDP700-FET-BD

...FET-BD Embedded Solutions High Integrated MOSFET Adapter Evaluation Board [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate...

Brand Name:Infineon

Model Number:IRFP4668PBF

Place of Origin:China

.... It belongs to the HEXFET® series and is suitable for use as a single FET in circuit designs. With a drain-to-source voltage (Vdss) rating of 200V, this MOSFET can handle high voltage levels, making it suitable for demanding applications. It has

Brand Name:Texas Instruments

Model Number:OPA657N/250

Place of Origin:USA

OPA657N/250 High Speed Operational Amplifiers 1.6GHz Low Noise FET-Input Op Amp Product Category: High Speed Operational Amplifiers RoHS: Details Series: OPA657 Number of Channels: 1 Channel GBP - Gain Bandwidth Product: 1.6 GHz SR - Slew Rate: 700 V/us ...

Brand Name:Toshiba

Model Number:TK100E08N1,S1X

Place of Origin:JAPAN

Product Description: Power IC Chip is a state-of-the-art integrated circuit intended for use in switching power supplies. It is a MOSFET N device with a size of 13.63*16.95mm and a weight of 6.15, and features a maximum voltage rating of 650V and a maximum...

Brand Name:TI

Model Number:ESD401DPYR3

Place of Origin:USA

Product Description: Discrete Semiconductor is a comprehensive product line of electronic components that are used in a wide range of applications. The products include rectifiers, transistors, voltage regulators, inductors, and FETs. Our products are ...