fets mosfets high performance transistor

Brand Name:onsemi

Model Number:FDA38N30

Place of Origin:original

FDA38N30 MOSFET Power Electronics TO-3P-3 N-Channel 30V 38A 1.7Ohm High Performance Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300 V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds...

Brand Name:Vishay / Siliconix

Model Number:IRFP460LC

...power your electronic devices, then the IRFP460LC Power MOSFET might be just what you need. This high-performance transistor is ideal for use in a broad range of applications, from audio amplifiers to motor control circuits. Here are some pros and cons to

Model Number:FZT653TA

Place of Origin:original factory

SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FEATURES * Low saturation voltage COMPLEMENTARY TYPE— FZT753 PARTMARKING DETAIL— FZT653 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ...

Brand Name:VBE

Model Number:VBE09260B2

Place of Origin:CHINA

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS ...

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

... Hole TO-220AB Specification: Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)

Brand Name:Original Factory

Model Number:NTBG040N120SC1

Place of Origin:CN

... Vgs(th) (Max) @ Id 4.3V @ 10mA Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V Features Of Transistors Typ. RDS(on)= 40 m

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

Place of Origin:CHINA

...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive ...

Brand Name:CANYI

Model Number:SI2301

Place of Origin:Guangdong, China

SI2301 MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features: Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings and Thermal Characteristics (TA = 25℃...

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id...

Brand Name:STMicroelectronics

Model Number:STW9N150

STW9N150 MOSFET N-CH 1500V 8A TO247-3 Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Mfr STMicroelectronics Series PowerMESH™ Package Tube Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) ...

Model Number:FDS6699S

Place of Origin:America

Brand Name:Fairchild

... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30.0 V ...

Place of Origin:Original

STD2NK60Z-1 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4.5V @ 50µA ...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

... IRF740 IRFZ44 BT136S-600 FQPF5N60C hot sale and in stock, wholesale will get good quote. Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current -

Brand Name:Original Factory

Model Number:BSZ050N03LSGATMA1

Place of Origin:China

... (ECDSA):ECDSA-based authentication Product Specifications Gate Charge (Qg) (Max) @ Vgs: 35 NC @ 10 V Technology: MOSFET (Metal Oxide) FET Type N-Channel Drain to Source Voltage (Vdss) 30 V Drive Voltage (Max Rds On,

Brand Name:Original brand

Model Number:STO33N60M6

Place of Origin:Original

Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet Power Transistor

Brand Name:TOSHIBA

Model Number:TK35N65W

Place of Origin:Original Factory

...-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages.