fet power transistor smd

Place of Origin:JAPAN

Brand Name:FUJITSU

Model Number:FMM5061

FMM5061 is a L-Band Medium & High Power GaAs FET. Part NO: FMM5061 Brand: FUJITSU Date Code: 04+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Brand Name:Original brand

Model Number:STL26N60DM6

Place of Origin:Original

Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines...

Brand Name:Analog Devices Inc.

Model Number:HMC442LC3BTR

Place of Origin:Multi-origin

... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:Hua Xuan Yang

Model Number:AP3N10BI

Place of Origin:ShenZhen China

...Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power...

Model Number:FMMT489

...power transistor in an SMD SOT-23 package, designed for applications requiring very low equivalent on-resistance. It offers robust performance with specified absolute maximum ratings and detailed electrical characteristics, making it suitable for various electronic circuits. Product Attributes SMD Type: IC SMD Type Transistors...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:CANYI

Model Number:AO3400

Place of Origin:Guangdong, China

AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor Features: Model Number:AO3400 Type:MOSFET Package Type:Surface Mount Product Name:AO3400 Other name:AO3400A Marking:A09T FET Type:N-Channel Drain to Source Voltage (Vdss):30V ...

Brand Name:Original

Model Number:IPG20N06S4L14AATMA1

Place of Origin:Original

...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor

Brand Name:ST

Model Number:STGB10NC60KDT4

Place of Origin:Original

...Transistor Applications High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drives Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: D2PAK-3 Mounting Style: SMD...

Brand Name:Julun

Model Number:PG-TO 252/PG-TO 251

Place of Origin:CHINA

IPD70R1K4CE, IPS70R1K4CE FET 700V CoolMOS CE Power Transistor MOS tube Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to ...

Brand Name:Original Factory

Model Number:IPP65R190CFD7A

Place of Origin:CN

...FETs MOSFETs Transistors TO-220-3 Integrated Circuit Chip​ Product Description Of IPP65R190CFD7A IPP65R190CFD7A is 650V CoolMOS CFD7A SJ Power Device, the package is TO-220-3, Through Hole. Specification Of IPP65R190CFD7A Part Number IPP65R190CFD7A Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1291 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V Power...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ...

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44N

...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V Power...

Brand Name:Ti

Model Number:CSD13202Q2

...Power Transistor Clock MOSFET N-CH Power MOSFET 12V 9.3mohm 1 Features Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 2-mm × 2-mm Plastic Package 2 Applications Optimized for Load Switch Applications Storage, Tablets, and Handheld Devices Optimized for Control FET...

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id...

Brand Name:onsemi

Model Number:NJVMJD31CT4G

Place of Origin:CN

NJVMJD31CT4G Bipolar Transistors - BJT 3.0 A, 100 V NPN Bipolar Power Transistor Features Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves (“1" Suffix) Lead ...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

...power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD