fet power transistor 80v

Brand Name:Infineon

Model Number:BSC072N08NS5ATMA1

Place of Origin:original

BSC072N08NS5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTM5 Power-Transistor 80V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds...

Categories:Diodes Transistors

Country/Region:china

MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ...

Model Number:BD680

...Power Transistor The ISC BD680 is a Silicon PNP Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -80V and a minimum DC Current Gain of 750 at IC= -1.5 A. This transistor...

Brand Name:ROHM

Model Number:B1568

Place of Origin:Original

Power amplifler 3 Pin Transistor −80V −4A B1568 pair with 2SD2399 Features 1) Available in TO-220 FN package 2) Darling connection provides high dc current gain (hFE) 3) Damper diode is incorporated 4) Built in resistors between base and emitter 5) Two millimeters lower than TO-220 FP which allows higher density mounting 6) Complementary pair with 2SD2399 Applications Power...

Brand Name:CJ

Model Number:BCX56-10

Place of Origin:CN

BCX56-10# 80V 1A 1.25W NPN medium power transistors SOT89 Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■ MOSFET drivers ■ Amplifiers ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMS007N08LC

...Power MOSFET FDMS007N08LC Power MOSFET 80V Single N Channel, 84A, 6.7mΩ in Power 56 Package. [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Place of Origin:Taiwan

Brand Name:Motorola, Inc

Model Number:MRF136

Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ...

Brand Name:Hua Xuan Yang

Model Number:AP3N10BI

Place of Origin:ShenZhen China

...Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power...

Model Number:BCX56

Brand Name:Original

Place of Origin:US

...Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V Power...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:CANYI

Model Number:AO3400

Place of Origin:Guangdong, China

AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor Features: Model Number:AO3400 Type:MOSFET Package Type:Surface Mount Product Name:AO3400 Other name:AO3400A Marking:A09T FET Type:N-Channel Drain to Source Voltage (Vdss):30V ...

Model Number:BCX56

Place of Origin:original factory

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and ...

Brand Name:ST brand

Model Number:STB270N4F3 STB270N TO-263-3

Place of Origin:Japan

Brand new MOS FET STB270N4F3 STB270N TO-263-3 mosfet Model number/ Part number STB270N4F3 STB270N Package TO-263- 3 Original condition Original 100% Brand name ST Stock Yes! In stock!! Bulk!! Contact me now Whatsapp/ Skype/ Number 86- 15102073750 - Product...

Brand Name:Julun

Model Number:PG-TO 252/PG-TO 251

Place of Origin:CHINA

IPD70R1K4CE, IPS70R1K4CE FET 700V CoolMOS CE Power Transistor MOS tube Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to ...

Brand Name:Original Factory

Model Number:IPP65R190CFD7A

Place of Origin:CN

...FETs MOSFETs Transistors TO-220-3 Integrated Circuit Chip​ Product Description Of IPP65R190CFD7A IPP65R190CFD7A is 650V CoolMOS CFD7A SJ Power Device, the package is TO-220-3, Through Hole. Specification Of IPP65R190CFD7A Part Number IPP65R190CFD7A Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1291 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V Power...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ...

Brand Name:onsemi

Model Number:SGL160N60UFD

Place of Origin:Original Factory

IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications...

Brand Name:Original

Model Number:FQPF18N60C

...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor...