excellent reliability rf power transistors

Brand Name:Infineon / CYPRESS

Model Number:CYW20736A1KML2GT

Place of Origin:original

...RF Power Transistors High Performance Excellent Reliability Package 32-VFQFN Type TxRx + MCU RF Family/Standard Bluetooth Protocol Bluetooth v4.1 Frequency 2.4GHz Serial Interfaces I²C, SPI, UART GPIO 14 Voltage - Supply 1.4V ~ 3.6V Operating Temperature -30°C ~ 85°C Mounting Type Surface Mount Package / Case 32-VFQFN Exposed Pad Supplier Device Package 32-QFN (5x5) CYW20736A1KML2GT RF Power Transistor The CYW20736A1KML2GT RF

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRW53601

MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

...RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor...

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPD1035

QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode...

Brand Name:Sinoscite

Model Number:SNSD221

Place of Origin:Sichuan, China

RF Low VSWR High Reliability Four Way waveguide Power Divider Product Description 1. Working bandwidth:30~36GHz; 2. V.S.W.R:<1.3; 3. Insertion loss:<0.2dB 4. Output isolation:>20dB 5. Amplitude error:±0....

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Model Number:2SK4115

Place of Origin:Guangdong, China

Brand Name:ALL BRAND

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Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...

Brand Name:TeXin

Model Number:TX-50W

Place of Origin:Shenzhen China

.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power...

Brand Name:Anterwell

Model Number:2SC1972

Place of Origin:original factory

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...

Brand Name:Keysight/Agilent/HP

Model Number:Keysight/Agilent 8481B

...RF power from 10 MHz to 18 GHz at levels up to +44 dBm, making a single probe sufficient for kW radar drivers, high-power amplifiers and Ku-band links. Its thermocouple architecture delivers true-RMS readings on any modulation without range-switch glitches, while the built-in Type-N attenuator chain and excellent...