enhancement mode rf power vdmos transistor

Categories:RF Transistors

Country/Region:china

SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source Breakdown ...

Brand Name:Hua Xuan Yang

Model Number:G120P06LR1D

Place of Origin:ShenZhen China

Enhancement Mode Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities. Many power...

Brand Name:ST

Model Number:STPS15L30C-TR STS1DNC45 STV6419AG

Place of Origin:Original

Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF6VP3450HR5

MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview ...

Brand Name:FAIRCHILD

Model Number:NDS356AP

Place of Origin:Philippines

...Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power

Brand Name:Freescale

Model Number:MRF6V2150NBR1

Place of Origin:USA

MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • ...

Brand Name:Intel

Model Number:EPM7256AEQC208-10

Place of Origin:Multi-origin

...Listing: Product Name: EPM7256AEQC208-10 RF Power Transistor Product Features: - N-Channel Enhancement Mode - Self-Aligned Silicon Gate - High Performance - Low On-Resistance Technical Specifications: - Maximum Power Dissipation: 2.8W - Maximum Drain ...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

...-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode...

Brand Name:Original Factory

Model Number:IGLR60R340D1XUMA1

Place of Origin:CN

...Enhancement Mode Power Transistor Product Description Of IGLR60R340D1XUMA1 IGLR60R340D1XUMA1 is 600V CoolGaN Enhancement Mode Power Transistor. Specification Of IGLR60R340D1XUMA1 Vgs(th) (Max) @ Id 1.6V @ 530µA Vgs (Max) -10V Input Capacitance (Ciss) (Max) @ Vds 87.7 pF @ 400 V Power...

Model Number:NDT452AP

Place of Origin:original factory

NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:2N7002T

...Power MOSFET 2N7002T N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2Ω [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Brand Name:R&S

Model Number:URE3

Place of Origin:Germany

...RF Power Meter Description of Used Rohde And Schwarz URE3 PEAK/RMS Voltmeter RF Power Meter RMS/Peak Voltmeter URE3 further enhances the range of applications due to its greater frequency range and higher accuracy, built-in frequency counter and additional peak-responding rectifier. Fields of application Level measurements in audio range Interference measurements on switch-mode power...

Brand Name:JUYI

Model Number:JY14M

Place of Origin:China

...Enhancement Mode Power MOSFET General Description Incorporating state-of-the-art trench processing techniques, the JY14M power field transistor operates with high cell density, resulting in reduced on-resistance and boasting a high repetitive avalanche rating. This unique combination makes it an exceptional device that offers both efficiency and reliability, suitable for various applications, particularly power...

Place of Origin:US

Brand Name:Original

Model Number:AP95T07GP

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Brand Name:SILAN

Model Number:SVF840F

Place of Origin:CHINA

... A, 500V N-Channel Enhanced Field Effect Transistor 1.description SVF840F/D/S/MJ N-channel enhancement mode high voltage power MOS field effect transistors are manufactured using Silan Microelectronics' F-CellTM planar high voltage VDMOS process technology...

Brand Name:ON

Model Number:FDA59N30

Place of Origin:Original

... has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

Brand Name:NXP

Model Number:BSH201

Place of Origin:CHINA

... level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This

Brand Name:Original

Model Number:IPG20N06S4L14AATMA1

Place of Origin:Original

...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor

Brand Name:Lingxun

Model Number:CS3N50A2

Place of Origin:China

...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of adaptor and charger. Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a

Model Number:ZVN4525ZTA

Place of Origin:Guangdong, China

Brand Name:original

Original and new Transistor SOT-89 ZVN4525ZTA MOS tube Products Description: 1.This 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal ...