enhancement mode power mosfet n channel

Brand Name:Lingxun

Place of Origin:China

...Enhancement Mode Power Mosfet N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Applications Load Switch PWM Application Power Management Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and testing of power...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVMS5P02

High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:onsemi

Model Number:FDS86267P

Place of Origin:original

FDS86267P High Performance N-Channel Enhancement Mode Power MOSFET for Power Electronics Applications 8-SOIC 150V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive ...

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

...Channel Enhancement Mode Power MOSFET GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power...

Brand Name:Anterwell

Model Number:AP4511GD

Place of Origin:original factory

...CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel...

Model Number:AP4511GD

Place of Origin:original factory

...CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel...

Brand Name:APEC

Model Number:AP4953GM

Place of Origin:Original Factory

INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. 　AP4953GM Manufacturer 　APEC supply ability 　3000 datecode 　2007+ package SOP　 remark new...

Brand Name:Hua Xuan Yang

Model Number:NCE01P18D

Place of Origin:ShenZhen China

NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details

Brand Name:APEC

Model Number:AP4953GM

Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. 　AP4953GM Manufacturer 　APEC supply ability 　3000 datecode 　2007+ package SOP　 remark new and original stock Competitive Advantage: Warranty :180 days ! Free shipping: Order ove...

Place of Origin:US

Brand Name:Original

Model Number:AP95T07GP

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Brand Name:juyi

Model Number:JY8N5M

Place of Origin:China

General Description: The product utilizes the advanced planar processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...

Brand Name:Original Factory

Model Number:IGLR60R190D1XUMA1

Place of Origin:CN

...IGLR60R190D1XUMA1 N-Channel 600V Enhancement Mode Power Transistor Product Description Of IGLR60R190D1XUMA1 IGLR60R190D1XUMA1 is N-Channel 600V Enhancement Mode Power Transistor. Specification Of IGLR60R190D1XUMA1 Product Status Active FET Type N-Channel ...

Brand Name:Freescale

Model Number:MRF6V2150NBR1

Place of Origin:USA

MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD ...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • ...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power...

Brand Name:NXP Semiconductors

Model Number:SI2304DS,215

Place of Origin:China

...Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs Features TrenchMOS™ technology Very fast switching Subminiature surface mount package. Applications Battery management High speed switch Low power DC to DC converter. Description N-channel enhancement mode...

Brand Name:Diodes

Model Number:DMN26D0UFB4-7

Place of Origin:UAS

... MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of channels: 1 Channel ...

Brand Name:Vishay Semiconductor

Model Number:SIHF10N40D-E3

... N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 Automotive No PPAP No Product Category Power MOSFET Configuration Single Channel Mode Enhancement Channel Type...

Brand Name:IXYS

Model Number:IXFK140N30P

Place of Origin:Germany

...Power Mosfet Hiperfet TO-264 300V 140A Space Savings N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode VDSS = 300V I D25= 140A RDS(on)≤24mΩ DS99557F(5/08)trr≤200ns Features • Fast intrinsic diode • Avalanche Rated • Low RDS(ON) and QG • Low package inductance Advantages z Easy to mount z Space savings z High power density Applications • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power