electronic power cvd sic epitaxy wafer

Brand Name:zmsh

Model Number:SiC Epitaxy Wafer

Place of Origin:China

... layers grown on a SiC Epitaxy substrate. They are used as a key building block in various electronic and optoelectronic devices. It typically use SiC Epitaxy substrate material. SiC is a wide-bandgap semiconductor with excellent thermal conductivity,

Brand Name:ZMSH

Model Number:4 inch

Place of Origin:China

... capability, 8” SiC epitaxial wafers offer unparalleled opportunities for scaling up power device production while driving down the cost per device. As demand for electric vehicles, renewable energy, and industrial power electronics continues to

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the

Country/Region:china

SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch silicon carbide substrate, widely used in electronic

Brand Name:PAM-XIAMEN

Place of Origin:China

...SiC Crystal Wafer With Low Micropipe Density,2”Size PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2