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| Categories | Integrated Circuit Components | 
|---|---|
| Brand Name: | Infineon | 
| Model Number: | IRF7420TRPBF | 
| Certification: | CE, GCF, ROHS | 
| Place of Origin: | China | 
| MOQ: | 1 | 
| Price: | Negotiable | 
| Payment Terms: | T/T, Western Union, | 
| Supply Ability: | 1000pcs per month | 
| Delivery Time: | 3-5 working days after received the payment | 
| Packaging Details: | Packed in original tray firstly ,then carton, at last Bubble bag for outer packing | 
| Function: | Step-Up, Step-Down | 
| Output Configuration: | Positive or Negative | 
| Topology: | Buck, Boost | 
| Output Type: | Adjustable | 
| Number of Outputs: | 1 | 
| Company Info. | 
| TOP Electronic Industry Co., Ltd. | 
| Verified Supplier | 
| View Contact Details | 
| Product List | 
Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Applications
Power Management Modules (PMIC): Widely used in motherboards, servers, network communication equipment, and portable electronics as load switches, power path management, and switching transistors in DC-DC synchronous buck/boost converters. Its integrated design significantly saves PCB space.
Motor Drive and Control: Ideal for driving small to medium-power DC motors, such as in robotics, automated equipment, and precision instruments, where it enables compact H-bridge or half-bridge circuits for motor direction and speed control.
Battery-Powered Devices: Used in smartphones, tablets, TWS earphone charging cases, portable medical devices, and more for battery protection circuits, charge/discharge management, and load switching. Its logic-level gate threshold (1.8V drive) and low on-resistance make it highly suitable for low-voltage, high-efficiency applications.
Signal Switching & Multiplexing: Applicable for routing analog or digital signals in test equipment, audio interfaces, or data acquisition systems.
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
INFORMATION
| Category | ||
| Mfr | ||
| Series | ||
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | |
| Part Status | Obsolete | |
| FET Type | ||
| Technology | ||
| Drain to Source Voltage (Vdss) | 12 V | |
| Current - Continuous Drain (Id) @ 25°C | ||
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 11.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 4.5 V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3529 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.5W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SO | |
| Package / Case | ||
| Base Product Number | 
Drawing


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