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IPD25N06S4L-30

Categories Semiconductor IC
Product Category: MOSFET
Id - Continuous Drain Current: 25 A
Pd - Power Dissipation: 29 W
Vds - Drain-Source Breakdown Voltage: 60 V
Packaging: Tape & Reel (TR)
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Package: TO-252
Rds On - Drain-Source Resistance: 23 mOhms
RoHS: Green available
Factory Pack Quantity: 2500
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Qg - Gate Charge: 16.3 nC
Manufacturer: Infineon Technologies
Description: MOSFET N-Ch 60V 25A DPAK-2 OptiMOS-T2
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IPD25N06S4L-30

The IPD25N06S4L-30,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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