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71V25761S166PFG8 IC SRAM 4.5MBIT PAR 100TQFP Renesas Electronics America Inc

71V25761S166PFG8 IC SRAM 4.5MBIT PAR 100TQFP Renesas Electronics America Inc

71V25761S166PFG8 IC SRAM 4.5MBIT PAR 100TQFP Renesas Electronics America Inc
71V25761S166PFG8 IC SRAM 4.5MBIT PAR 100TQFP Renesas Electronics America Inc
Categories Flash Memory IC
Brand Name: Renesas Electronics America Inc
Model Number: 71V25761S166PFG8
MOQ: 1
Price: Based on current price
Payment Terms: T/T
Supply Ability: In stock
Delivery Time: 3-5 work days
Packaging Details: anti-static bag & cardboard box
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 4.5Mbit
Memory Organization: 128K x 36
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)
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Company Info.
Sanhuang electronics (Hong Kong) Co., Limited
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71V25761S166PFG8 IC SRAM 4.5MBIT PAR 100TQFP Renesas Electronics America Inc

Product Details


DESCRIPTION

The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology.

FEATURES

• Ideal for high-performance processor secondary cache
• Commercial (0° to 70°C) and Industrial (-40° to 85°C)
temperature options
• Fast access times:
— Commercial: 10/12/15/20ns
— Industrial: 15ns
• Low standby current (maximum):
— 2mA full standby
• Small packages for space-efficient layouts:
— 28-pin 300 mil SOJ
— 28-pin 300 mil plastic DIP (Commercial only)
— 28-pin TSOP Type I
• Produced with advanced high-performance CMOS
technology
• Inputs and outputs are LVTTL-compatible
• Single 3.3V(±0.3V) power supply

Specifications

AttributeAttribute Value
ManufacturerIntegrated Circuit Systems
Product CategoryMemory ICs
Series71V25761S166
TypeSynchronous
PackagingTape & Reel (TR) Alternate Packaging
Unit-Weight0.023175 oz
Mounting-StyleSMD/SMT
Package-Case100-LQFP
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply3.135 V ~ 3.465 V
Supplier-Device-Package100-TQFP (14x20)
Memory Capacity4.5M (128K x 36)
Memory-TypeSRAM - Synchronous
Speed166MHz
Access-Time3.5 ns
Format-MemoryRAM
Maximum Operating Temperature+ 70 C
Operating temperature range0 C
Interface-TypeParallel
Organization128 k x 36
Supply-Current-Max320 mA
Part-#-Aliases71V25761 IDT71V25761S166PFG8
Supply-Voltage-Max3.465 V
Supply-Voltage-Min3.135 V
Package-CaseTQFP-100
Maximum-Clock-Frequency166 MHz
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part#DescriptionManufacturerCompare
IDT71V25761S166PFI8
Memory		Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100Integrated Device Technology Inc71V25761S166PFG8 vs IDT71V25761S166PFI8
71V25761S166PFGI
Memory		Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100Integrated Device Technology Inc71V25761S166PFG8 vs 71V25761S166PFGI
IDT71V25761S166PF
Memory		Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100Integrated Device Technology Inc71V25761S166PFG8 vs IDT71V25761S166PF
71V25761S166PFG
Memory		TQFP-100, TrayIntegrated Device Technology Inc71V25761S166PFG8 vs 71V25761S166PFG
71V25761S166PF8
Memory		Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100Integrated Device Technology Inc71V25761S166PFG8 vs 71V25761S166PF8
IDT71V25761S166PFI
Memory		Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100Integrated Device Technology Inc71V25761S166PFG8 vs IDT71V25761S166PFI

Descriptions

SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Parallel 166MHz 3.5ns 100-TQFP (14x20)
SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM
Quality 71V25761S166PFG8 IC SRAM 4.5MBIT PAR 100TQFP Renesas Electronics America Inc wholesale

71V25761S166PFG8 IC SRAM 4.5MBIT PAR 100TQFP Renesas Electronics America Inc

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