NCP81278TMNTXG onsemi

Here is the English description of the NCP81278TMNTXG chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 8.2A
• On-Resistance: 28 mΩ (typ)
• Fast Switching Speeds
• Power SO-8 Package
• Integrated Dual N-Channel MOSFET

The NCP81278TMNTXG is a dual N-channel power MOSFET from ON Semiconductor.

Key Features:

• Each FET can switch up to 8.2A of current
• Low on-resistance of 28 mΩ minimizes conduction losses
• Fast switching for high efficiency applications
• Power SO-8 package provides good thermal dissipation
• Integrated dual FET reduces component count

Common Applications:

• Buck regulators and DC-DC converters up to 8.2A
• Motor drivers and controls requiring dual FET functionality
• Circuits where board space is constrained

Benefits include a compact 8.2A dual switch with both FETs integrated to simplify design.

Well suited for applications requiring dual switching paths in a single package.

In summary, the NCP81278TMNTXG combines dual 8.2A power MOSFETs in one package for space-efficient power switching.

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