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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | FDD3672 |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1-3 days |
| Packaging Details: | standard |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs: | 28mOhm @ 44A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 36 nC @ 10 V |
| Vgs (Max): | ±20V |
FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 28mOhm @ 44A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 135W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-252AA | |
Package / Case |
Product Listing:
ON Semiconductor FDD3672 - N-Channel Power MOSFET
The FDD3672 is a N-Channel power MOSFET manufactured by ON Semiconductor. It offers excellent power dissipation, low gate charge and fast switching speed.
Features:
• 100V drain-source breakdown voltage
• Maximum continuous drain current of 10.2A
• Low gate charge: Qg = 16nC typical
• Maximum drain-source on-state resistance of 0.48Ω
• Internal avalanche energy rated at EAS = 7.3mJ
• Maximum operating junction temperature of 175°C
• Average gate charge: Qg = 16nC typical
• Fast switching speed: tD(on) = 10ns typical
• Lead-free, RoHS-compliant package
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