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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | MMBF170LT1G |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1-3 days |
| Packaging Details: | standard |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs: | 5Ohm @ 200mA, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs (Max): | ±20V |
MMBF170LT1G MOSFET Power Electronics N-Channel 60 V 500mA 225mW Surface Mount SOT-23-3
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V | |
Rds On (Max) @ Id, Vgs | 1.1Ohm @ 500mA, 4.5V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 63 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 350mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23-3 |
Product Listing:
MMBF170LT1G MOSFET Power Electronics, by ON Semiconductor
Product Features:
• Low drain-source on resistance RDS(on)
• Low gate charge Qg
• Excellent switching performance
• Logic level gate drive
• Fast switching speeds
• Low threshold voltage Vth
• Small package size
• Low capacitance
• RoHS compliant
Electrical Characteristics:
• Drain-Source Breakdown Voltage: 100V
• Drain-Source On Resistance: 0.14 Ohm
• Gate-Source On Voltage: 1.5V
• Maximum Drain Current: 3A
• Maximum Power Dissipation: 1.7W
• Operating Junction Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Package Type: SOT-23-6
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