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DMN2005UFG-7

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	1.2V @ 250µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:	164 nC @ 10 V
Rds On (Max) @ Id, Vgs:	4.6mOhm @ 13.5A, 4.5V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	20 V
Vgs (Max):	±12V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	6495 pF @ 10 V
Mounting Type:	Surface Mount
Series:	-
Supplier Device Package:	PowerDI3333-8
Mfr:	Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:	18.1A (Tc)
Power Dissipation (Max):	1.05W (Ta)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	DMN2005
Description:	MOSFET N-CH 20V 18.1A PWRDI3333

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 20 V 18.1A (Tc) 1.05W (Ta) Surface Mount PowerDI3333-8

Product Tags:

LM3S5P31-IQC80-C5

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