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SI2318DS-T1-GE3

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	3V @ 250µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 10 V
Rds On (Max) @ Id, Vgs:	45mOhm @ 3.9A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	40 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	540 pF @ 20 V
Mounting Type:	Surface Mount
Series:	TrenchFET®
Supplier Device Package:	SOT-23-3 (TO-236)
Mfr:	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Power Dissipation (Max):	750mW (Ta)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	SI2318
Description:	MOSFET N-CH 40V 3A SOT23-3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 40 V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Product Tags:

SI2304DS

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