SI2301CDS-T1-GE3

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	1V @ 250µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:	10 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:	112mOhm @ 2.8A, 4.5V
FET Type:	P-Channel
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	20 V
Vgs (Max):	±8V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	405 pF @ 10 V
Mounting Type:	Surface Mount
Series:	TrenchFET®
Supplier Device Package:	SOT-23-3 (TO-236)
Mfr:	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:	3.1A (Tc)
Power Dissipation (Max):	860mW (Ta), 1.6W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	SI2301
Description:	MOSFET P-CH 20V 3.1A SOT23-3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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P-Channel 20 V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

Product Tags:

AT93C46A-SI2.7

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